Growth, Structural and Optical Properties of High Quality GaAs Nanowires for Optoelectronics

We investigate how growth parameters may be chosen to obtain high quality GaAs nanowires suitable for optoelectronic device applications. Growth temperature and precursor flows have a significant effect on the morphology, crystallographic quality, intrinsic doping and optical properties of the resul...

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Bibliographic Details
Main Authors: Joyce, H.J., Qiang Gao, Yong Kim, Tan, H.H., Jagadish, C., Xin Zhang, Yanan Guo, Jin Zou, Fickenscher, M.A., Perera, S., Hoang, T.B., Smith, L.M., Jackson, H.E., Yarrison-Rice, J.M.
Format: Conference Proceeding
Language:English
Subjects:
Carbon
Gallium arsenide
Impurities
Magnetic cores
Nanowires
Optoelectronic devices
Photoluminescence
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Summary:We investigate how growth parameters may be chosen to obtain high quality GaAs nanowires suitable for optoelectronic device applications. Growth temperature and precursor flows have a significant effect on the morphology, crystallographic quality, intrinsic doping and optical properties of the resulting nanowires. Significantly, we find that low growth temperature and high arsine flow rate improve nanowire optical properties, reduce carbon impurity incorporation and drastically reduce planar crystallographic defects. Additionally, cladding the GaAs nanowire cores in an AlGaAs shell enhances emission efficiency. These high quality nanowires should create new opportunities for optoelectronic devices.
ISSN:1944-9399
1944-9380
DOI:10.1109/NANO.2008.25