Loading…

Scanning Capacitance Characterization of Potential Screening in InAs Nanowire Devices

We have used scanning capacitance microscopy (SCM) and spectroscopy (SCS) to examine the effects of micron- scale metal contacts, typically present in nanowire-based electronic devices, on carrier modulation and electrostatic behavior in InAs semiconductor nanowires. We observe a pronounced dependen...

Full description

Saved in:
Bibliographic Details
Main Authors: Law, J., Dayeh, S.A., Wang, D., Yu, E.T.
Format: Conference Proceeding
Language:English
Subjects:
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by
cites
container_end_page 572
container_issue
container_start_page 569
container_title
container_volume
creator Law, J.
Dayeh, S.A.
Wang, D.
Yu, E.T.
description We have used scanning capacitance microscopy (SCM) and spectroscopy (SCS) to examine the effects of micron- scale metal contacts, typically present in nanowire-based electronic devices, on carrier modulation and electrostatic behavior in InAs semiconductor nanowires. We observe a pronounced dependence of scanning capacitance images and spectra on distance between the scanning capacitance probe tip and nanowire contact up to distances of 3-4 mum. Based on comparison of these data with results of finite-element electromagnetic simulations, we interpret these results as a consequence of electrostatic screening of the tip-nanowire potential difference by the large metal contact. The results provide direct experimental verification of contact screening effects predicted in the literature, and are expected to have substantial implications for the design and expected performance of nanowire-based electronic devices, most notably nanowire field-effect transistors. Ultimately, they are indicative of the importance of assessing and accounting for the effect of large- scale contact and circuit elements on the characteristics of nanoscale electronic devices.
doi_str_mv 10.1109/NANO.2008.168
format conference_proceeding
fullrecord <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_4617150</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4617150</ieee_id><sourcerecordid>4617150</sourcerecordid><originalsourceid>FETCH-LOGICAL-i90t-6a6dce45e866a817bfee7605be3e89c9c0011f3bc812c28c2b483088d76f73793</originalsourceid><addsrcrecordid>eNo9jMlOwzAURc1QibZkyYqNfyDlOXZsv2UUpkpVitSyrhz3BYyKUyURCL6embs5i6NzGTsTMBMC8KIqquUsA7Azoe0BmwiVKZUJUOaQjQUqlaK0cMQSNPbPSTz-d4gjNvnqESBHfcKSvn-Cz6lcaszH7H7lXYwhPvDS7Z0Pg4ueePnoOucH6sK7G0Ibedvwu3agOAS34yvfEX03IfJ5LHpeudi-ho74Jb0ET_0pGzVu11PyyylbX1-ty9t0sbyZl8UiDQhDqp3eelI5Wa2dFaZuiIyGvCZJFj16ACEaWXsrMp9Zn9XKSrB2a3RjpEE5Zec_t4GINvsuPLvubaO0MCIH-QEib1af</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Scanning Capacitance Characterization of Potential Screening in InAs Nanowire Devices</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Law, J. ; Dayeh, S.A. ; Wang, D. ; Yu, E.T.</creator><creatorcontrib>Law, J. ; Dayeh, S.A. ; Wang, D. ; Yu, E.T.</creatorcontrib><description>We have used scanning capacitance microscopy (SCM) and spectroscopy (SCS) to examine the effects of micron- scale metal contacts, typically present in nanowire-based electronic devices, on carrier modulation and electrostatic behavior in InAs semiconductor nanowires. We observe a pronounced dependence of scanning capacitance images and spectra on distance between the scanning capacitance probe tip and nanowire contact up to distances of 3-4 mum. Based on comparison of these data with results of finite-element electromagnetic simulations, we interpret these results as a consequence of electrostatic screening of the tip-nanowire potential difference by the large metal contact. The results provide direct experimental verification of contact screening effects predicted in the literature, and are expected to have substantial implications for the design and expected performance of nanowire-based electronic devices, most notably nanowire field-effect transistors. Ultimately, they are indicative of the importance of assessing and accounting for the effect of large- scale contact and circuit elements on the characteristics of nanoscale electronic devices.</description><identifier>ISSN: 1944-9399</identifier><identifier>ISBN: 9781424421039</identifier><identifier>ISBN: 1424421039</identifier><identifier>EISSN: 1944-9380</identifier><identifier>EISBN: 1424421047</identifier><identifier>EISBN: 9781424421046</identifier><identifier>DOI: 10.1109/NANO.2008.168</identifier><identifier>LCCN: 2008900596</identifier><language>eng</language><publisher>IEEE</publisher><subject>Distance measurement ; Electric potential ; Electrostatics ; Geometry ; Nanoscale devices ; Probes ; Wires</subject><ispartof>2008 8th IEEE Conference on Nanotechnology, 2008, p.569-572</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4617150$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,27925,54555,54920,54932</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4617150$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Law, J.</creatorcontrib><creatorcontrib>Dayeh, S.A.</creatorcontrib><creatorcontrib>Wang, D.</creatorcontrib><creatorcontrib>Yu, E.T.</creatorcontrib><title>Scanning Capacitance Characterization of Potential Screening in InAs Nanowire Devices</title><title>2008 8th IEEE Conference on Nanotechnology</title><addtitle>NANO</addtitle><description>We have used scanning capacitance microscopy (SCM) and spectroscopy (SCS) to examine the effects of micron- scale metal contacts, typically present in nanowire-based electronic devices, on carrier modulation and electrostatic behavior in InAs semiconductor nanowires. We observe a pronounced dependence of scanning capacitance images and spectra on distance between the scanning capacitance probe tip and nanowire contact up to distances of 3-4 mum. Based on comparison of these data with results of finite-element electromagnetic simulations, we interpret these results as a consequence of electrostatic screening of the tip-nanowire potential difference by the large metal contact. The results provide direct experimental verification of contact screening effects predicted in the literature, and are expected to have substantial implications for the design and expected performance of nanowire-based electronic devices, most notably nanowire field-effect transistors. Ultimately, they are indicative of the importance of assessing and accounting for the effect of large- scale contact and circuit elements on the characteristics of nanoscale electronic devices.</description><subject>Distance measurement</subject><subject>Electric potential</subject><subject>Electrostatics</subject><subject>Geometry</subject><subject>Nanoscale devices</subject><subject>Probes</subject><subject>Wires</subject><issn>1944-9399</issn><issn>1944-9380</issn><isbn>9781424421039</isbn><isbn>1424421039</isbn><isbn>1424421047</isbn><isbn>9781424421046</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2008</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNo9jMlOwzAURc1QibZkyYqNfyDlOXZsv2UUpkpVitSyrhz3BYyKUyURCL6embs5i6NzGTsTMBMC8KIqquUsA7Azoe0BmwiVKZUJUOaQjQUqlaK0cMQSNPbPSTz-d4gjNvnqESBHfcKSvn-Cz6lcaszH7H7lXYwhPvDS7Z0Pg4ueePnoOucH6sK7G0Ibedvwu3agOAS34yvfEX03IfJ5LHpeudi-ho74Jb0ET_0pGzVu11PyyylbX1-ty9t0sbyZl8UiDQhDqp3eelI5Wa2dFaZuiIyGvCZJFj16ACEaWXsrMp9Zn9XKSrB2a3RjpEE5Zec_t4GINvsuPLvubaO0MCIH-QEib1af</recordid><startdate>200808</startdate><enddate>200808</enddate><creator>Law, J.</creator><creator>Dayeh, S.A.</creator><creator>Wang, D.</creator><creator>Yu, E.T.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>200808</creationdate><title>Scanning Capacitance Characterization of Potential Screening in InAs Nanowire Devices</title><author>Law, J. ; Dayeh, S.A. ; Wang, D. ; Yu, E.T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-6a6dce45e866a817bfee7605be3e89c9c0011f3bc812c28c2b483088d76f73793</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Distance measurement</topic><topic>Electric potential</topic><topic>Electrostatics</topic><topic>Geometry</topic><topic>Nanoscale devices</topic><topic>Probes</topic><topic>Wires</topic><toplevel>online_resources</toplevel><creatorcontrib>Law, J.</creatorcontrib><creatorcontrib>Dayeh, S.A.</creatorcontrib><creatorcontrib>Wang, D.</creatorcontrib><creatorcontrib>Yu, E.T.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library Online</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Law, J.</au><au>Dayeh, S.A.</au><au>Wang, D.</au><au>Yu, E.T.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Scanning Capacitance Characterization of Potential Screening in InAs Nanowire Devices</atitle><btitle>2008 8th IEEE Conference on Nanotechnology</btitle><stitle>NANO</stitle><date>2008-08</date><risdate>2008</risdate><spage>569</spage><epage>572</epage><pages>569-572</pages><issn>1944-9399</issn><eissn>1944-9380</eissn><isbn>9781424421039</isbn><isbn>1424421039</isbn><eisbn>1424421047</eisbn><eisbn>9781424421046</eisbn><abstract>We have used scanning capacitance microscopy (SCM) and spectroscopy (SCS) to examine the effects of micron- scale metal contacts, typically present in nanowire-based electronic devices, on carrier modulation and electrostatic behavior in InAs semiconductor nanowires. We observe a pronounced dependence of scanning capacitance images and spectra on distance between the scanning capacitance probe tip and nanowire contact up to distances of 3-4 mum. Based on comparison of these data with results of finite-element electromagnetic simulations, we interpret these results as a consequence of electrostatic screening of the tip-nanowire potential difference by the large metal contact. The results provide direct experimental verification of contact screening effects predicted in the literature, and are expected to have substantial implications for the design and expected performance of nanowire-based electronic devices, most notably nanowire field-effect transistors. Ultimately, they are indicative of the importance of assessing and accounting for the effect of large- scale contact and circuit elements on the characteristics of nanoscale electronic devices.</abstract><pub>IEEE</pub><doi>10.1109/NANO.2008.168</doi><tpages>4</tpages></addata></record>
fulltext fulltext_linktorsrc
identifier ISSN: 1944-9399
ispartof 2008 8th IEEE Conference on Nanotechnology, 2008, p.569-572
issn 1944-9399
1944-9380
language eng
recordid cdi_ieee_primary_4617150
source IEEE Electronic Library (IEL) Conference Proceedings
subjects Distance measurement
Electric potential
Electrostatics
Geometry
Nanoscale devices
Probes
Wires
title Scanning Capacitance Characterization of Potential Screening in InAs Nanowire Devices
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-23T09%3A36%3A15IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Scanning%20Capacitance%20Characterization%20of%20Potential%20Screening%20in%20InAs%20Nanowire%20Devices&rft.btitle=2008%208th%20IEEE%20Conference%20on%20Nanotechnology&rft.au=Law,%20J.&rft.date=2008-08&rft.spage=569&rft.epage=572&rft.pages=569-572&rft.issn=1944-9399&rft.eissn=1944-9380&rft.isbn=9781424421039&rft.isbn_list=1424421039&rft_id=info:doi/10.1109/NANO.2008.168&rft.eisbn=1424421047&rft.eisbn_list=9781424421046&rft_dat=%3Cieee_6IE%3E4617150%3C/ieee_6IE%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-i90t-6a6dce45e866a817bfee7605be3e89c9c0011f3bc812c28c2b483088d76f73793%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=4617150&rfr_iscdi=true