Optical characterization of a leaky-mode polysilicon photodetector using near-field scaning optical microscopy

Near-field scanning optical microscopy was used to characterize the light absorption capability of a leaky-mode coupled polysilicon photodetector fabricated for CMOS on-chip optical interconnects. The observed results are in good agreement with modal calculations.

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Bibliographic Details
Main Authors: Yuan, G., Nikkel, P., Thangaraj, C., Chen, T.W., Pownall, R., Iguchi, A., Lear, K.L.
Format: Conference Proceeding
Language:English
Subjects:
(000.0000) General
Optical coupling
Optical device fabrication
Optical films
Optical interconnections
Optical variables measurement
Optical waveguides
Photodetectors
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Description
Summary:Near-field scanning optical microscopy was used to characterize the light absorption capability of a leaky-mode coupled polysilicon photodetector fabricated for CMOS on-chip optical interconnects. The observed results are in good agreement with modal calculations.
ISSN:2160-9004
DOI:10.1109/CLEO.2006.4627961