A novel 2-12GHz 14dBm High Efficiency Power Distributed Amplifier for Ultra-Wideband- Applications Using a Low-Cost SiGe BiCMOS Technology

In this paper the analysis, design and measurement results of a novel 2-12 GHz power distributed amplifier for ultra-wideband radar and sensing applications is presented. The amplifier is fabricated in a low-cost 0.25 μm SiGe BiCMOS technology with a transit frequency of 25GHz. The circuit integrate...

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Bibliographic Details
Main Authors: Sewiolo, Benjamin, Weigel, Robert
Format: Conference Proceeding
Language:English
Subjects:
capacitively coupled
distributed amplifiers
Gain
heterojunction bipolar transistors
Impedance
Inductors
Power amplifiers
Power generation
SiGe BiCMOS integrated circuits
Silicon germanium
spiral inductors
tapered
Transistors
Ultra-Wideband
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Summary:In this paper the analysis, design and measurement results of a novel 2-12 GHz power distributed amplifier for ultra-wideband radar and sensing applications is presented. The amplifier is fabricated in a low-cost 0.25 μm SiGe BiCMOS technology with a transit frequency of 25GHz. The circuit integrates four cascode gain cells, which are capacitively coupled to the base line for power optimization. The collector line has been tapered for efficiency improvement. More than 14 dBm have been measured in the desired frequency range with an associated gain of 9 dB and a gain flatness of ±0.5 dB with total power consumption of 250mW. To the authors knowledge, this is the highest output power achieved by a distributed amplifier in SiGe technology in this frequency range. The chip size of the compact amplifier is 1.16mm 2 . Good agreement between simulation and measurement were achieved.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2008.4633254