Third order intermodulation distortion in Film Bulk Acoustic Resonators at resonance and antiresonance

This paper presents recent measurements and modeling of the third order intermodulation products of a Film Bulk Acoustic Resonator (FBAR), for a various values of frequency spacing between driving tones. The frequency dependence of voltage and current in the acoustic branch rules out a voltage-depen...

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Bibliographic Details
Published in:2008 IEEE MTT-S International Microwave Symposium Digest 2008-06, p.1259-1262
Main Authors: Rocas, Eduard, Collado, Carlos, Mateu, Jordi, Campanella, Humberto, O'Callaghan, Juan M.
Format: Article
Language:eng ; jpn
Subjects:
antiresonance
Film bulk acoustic resonators
Frequency measurement
Integrated circuit modeling
intermodulation
Microwave circuits
nonlinear characterization
Power measurement
resonance
Resonant frequency
Thin-film bulk acoustic wave resonators
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Summary:This paper presents recent measurements and modeling of the third order intermodulation products of a Film Bulk Acoustic Resonator (FBAR), for a various values of frequency spacing between driving tones. The frequency dependence of voltage and current in the acoustic branch rules out a voltage-dependent nonlinearity. The results show different slopes at resonance and antiresonance, which are correctly adjusted by the model with a current dependent inductor and/or capacitor. The intermodulation distortion is found to be dependent on the frequency spacing between driving tones, indicating memory effects.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2008.4633288