Third order intermodulation distortion in Film Bulk Acoustic Resonators at resonance and antiresonance

This paper presents recent measurements and modeling of the third order intermodulation products of a Film Bulk Acoustic Resonator (FBAR), for a various values of frequency spacing between driving tones. The frequency dependence of voltage and current in the acoustic branch rules out a voltage-depen...

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Published in:2008 IEEE MTT-S International Microwave Symposium Digest 2008-06, p.1259-1262
Main Authors: Rocas, Eduard, Collado, Carlos, Mateu, Jordi, Campanella, Humberto, O'Callaghan, Juan M.
Format: Article
Language:eng ; jpn
Subjects:
antiresonance
Film bulk acoustic resonators
Frequency measurement
Integrated circuit modeling
intermodulation
Microwave circuits
nonlinear characterization
Power measurement
resonance
Resonant frequency
Thin-film bulk acoustic wave resonators
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Collado, Carlos
Mateu, Jordi
Campanella, Humberto
O'Callaghan, Juan M.
description This paper presents recent measurements and modeling of the third order intermodulation products of a Film Bulk Acoustic Resonator (FBAR), for a various values of frequency spacing between driving tones. The frequency dependence of voltage and current in the acoustic branch rules out a voltage-dependent nonlinearity. The results show different slopes at resonance and antiresonance, which are correctly adjusted by the model with a current dependent inductor and/or capacitor. The intermodulation distortion is found to be dependent on the frequency spacing between driving tones, indicating memory effects.
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fullrecord <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_4633288</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4633288</ieee_id><sourcerecordid>4633288</sourcerecordid><originalsourceid>FETCH-LOGICAL-i1308-ba0eafc708258863aa001b3c5f8cb4c9490c96786cb64c673e897ef29d835cac3</originalsourceid><addsrcrecordid>eNpFUMtOwzAQNI9KhNIfgIt_IGX9to-looDUCgmKgFPlOI4w5IHs5MDfU0oFK61mdmY0h0XonMCUEDCXq-fH19WUAugpl4xRrQ_QKeGUc6I0YYcoo0LJXFEij_4NEMcoA8JNLrl4GaFMqR9GqDhBk5TeYTtcMEpJhqr1W4gl7mLpIw5t72PTlUNt-9C1uAyp7-KOhhYvQt3gq6H-wDPXDakPDj_41LV2m0nY9jjurtZ5bNtyu334U87QqLJ18pM9jtHT4no9v82X9zd389kyD4SBzgsL3lZOgaZCa8msBSAFc6LSruDOcAPOSKWlKyR3UjGvjfIVNaVmwlnHxujitzd47zefMTQ2fm32v2PfkzxetQ</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Third order intermodulation distortion in Film Bulk Acoustic Resonators at resonance and antiresonance</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Rocas, Eduard ; Collado, Carlos ; Mateu, Jordi ; Campanella, Humberto ; O'Callaghan, Juan M.</creator><creatorcontrib>Rocas, Eduard ; Collado, Carlos ; Mateu, Jordi ; Campanella, Humberto ; O'Callaghan, Juan M.</creatorcontrib><description>This paper presents recent measurements and modeling of the third order intermodulation products of a Film Bulk Acoustic Resonator (FBAR), for a various values of frequency spacing between driving tones. The frequency dependence of voltage and current in the acoustic branch rules out a voltage-dependent nonlinearity. The results show different slopes at resonance and antiresonance, which are correctly adjusted by the model with a current dependent inductor and/or capacitor. The intermodulation distortion is found to be dependent on the frequency spacing between driving tones, indicating memory effects.</description><identifier>ISSN: 0149-645X</identifier><identifier>ISBN: 1424417805</identifier><identifier>ISBN: 9781424417803</identifier><identifier>EISSN: 2576-7216</identifier><identifier>EISBN: 1424417813</identifier><identifier>EISBN: 9781424417810</identifier><identifier>DOI: 10.1109/MWSYM.2008.4633288</identifier><identifier>LCCN: 77-645125</identifier><language>eng ; jpn</language><publisher>IEEE</publisher><subject>antiresonance ; Film bulk acoustic resonators ; Frequency measurement ; Integrated circuit modeling ; intermodulation ; Microwave circuits ; nonlinear characterization ; Power measurement ; resonance ; Resonant frequency ; Thin-film bulk acoustic wave resonators</subject><ispartof>2008 IEEE MTT-S International Microwave Symposium Digest, 2008-06, p.1259-1262</ispartof><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4633288$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2056,27924,54554,54919,54931</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4633288$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Rocas, Eduard</creatorcontrib><creatorcontrib>Collado, Carlos</creatorcontrib><creatorcontrib>Mateu, Jordi</creatorcontrib><creatorcontrib>Campanella, Humberto</creatorcontrib><creatorcontrib>O'Callaghan, Juan M.</creatorcontrib><title>Third order intermodulation distortion in Film Bulk Acoustic Resonators at resonance and antiresonance</title><title>2008 IEEE MTT-S International Microwave Symposium Digest</title><addtitle>MWSYM</addtitle><description>This paper presents recent measurements and modeling of the third order intermodulation products of a Film Bulk Acoustic Resonator (FBAR), for a various values of frequency spacing between driving tones. The frequency dependence of voltage and current in the acoustic branch rules out a voltage-dependent nonlinearity. The results show different slopes at resonance and antiresonance, which are correctly adjusted by the model with a current dependent inductor and/or capacitor. The intermodulation distortion is found to be dependent on the frequency spacing between driving tones, indicating memory effects.</description><subject>antiresonance</subject><subject>Film bulk acoustic resonators</subject><subject>Frequency measurement</subject><subject>Integrated circuit modeling</subject><subject>intermodulation</subject><subject>Microwave circuits</subject><subject>nonlinear characterization</subject><subject>Power measurement</subject><subject>resonance</subject><subject>Resonant frequency</subject><subject>Thin-film bulk acoustic wave resonators</subject><issn>0149-645X</issn><issn>2576-7216</issn><isbn>1424417805</isbn><isbn>9781424417803</isbn><isbn>1424417813</isbn><isbn>9781424417810</isbn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><sourceid>6IE</sourceid><recordid>eNpFUMtOwzAQNI9KhNIfgIt_IGX9to-looDUCgmKgFPlOI4w5IHs5MDfU0oFK61mdmY0h0XonMCUEDCXq-fH19WUAugpl4xRrQ_QKeGUc6I0YYcoo0LJXFEij_4NEMcoA8JNLrl4GaFMqR9GqDhBk5TeYTtcMEpJhqr1W4gl7mLpIw5t72PTlUNt-9C1uAyp7-KOhhYvQt3gq6H-wDPXDakPDj_41LV2m0nY9jjurtZ5bNtyu334U87QqLJ18pM9jtHT4no9v82X9zd389kyD4SBzgsL3lZOgaZCa8msBSAFc6LSruDOcAPOSKWlKyR3UjGvjfIVNaVmwlnHxujitzd47zefMTQ2fm32v2PfkzxetQ</recordid><startdate>200806</startdate><enddate>200806</enddate><creator>Rocas, Eduard</creator><creator>Collado, Carlos</creator><creator>Mateu, Jordi</creator><creator>Campanella, Humberto</creator><creator>O'Callaghan, Juan M.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>200806</creationdate><title>Third order intermodulation distortion in Film Bulk Acoustic Resonators at resonance and antiresonance</title><author>Rocas, Eduard ; Collado, Carlos ; Mateu, Jordi ; Campanella, Humberto ; O'Callaghan, Juan M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i1308-ba0eafc708258863aa001b3c5f8cb4c9490c96786cb64c673e897ef29d835cac3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng ; jpn</language><creationdate>2008</creationdate><topic>antiresonance</topic><topic>Film bulk acoustic resonators</topic><topic>Frequency measurement</topic><topic>Integrated circuit modeling</topic><topic>intermodulation</topic><topic>Microwave circuits</topic><topic>nonlinear characterization</topic><topic>Power measurement</topic><topic>resonance</topic><topic>Resonant frequency</topic><topic>Thin-film bulk acoustic wave resonators</topic><toplevel>online_resources</toplevel><creatorcontrib>Rocas, Eduard</creatorcontrib><creatorcontrib>Collado, Carlos</creatorcontrib><creatorcontrib>Mateu, Jordi</creatorcontrib><creatorcontrib>Campanella, Humberto</creatorcontrib><creatorcontrib>O'Callaghan, Juan M.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library Online</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection><jtitle>2008 IEEE MTT-S International Microwave Symposium Digest</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Rocas, Eduard</au><au>Collado, Carlos</au><au>Mateu, Jordi</au><au>Campanella, Humberto</au><au>O'Callaghan, Juan M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Third order intermodulation distortion in Film Bulk Acoustic Resonators at resonance and antiresonance</atitle><jtitle>2008 IEEE MTT-S International Microwave Symposium Digest</jtitle><stitle>MWSYM</stitle><date>2008-06</date><risdate>2008</risdate><spage>1259</spage><epage>1262</epage><pages>1259-1262</pages><issn>0149-645X</issn><eissn>2576-7216</eissn><isbn>1424417805</isbn><isbn>9781424417803</isbn><eisbn>1424417813</eisbn><eisbn>9781424417810</eisbn><abstract>This paper presents recent measurements and modeling of the third order intermodulation products of a Film Bulk Acoustic Resonator (FBAR), for a various values of frequency spacing between driving tones. The frequency dependence of voltage and current in the acoustic branch rules out a voltage-dependent nonlinearity. The results show different slopes at resonance and antiresonance, which are correctly adjusted by the model with a current dependent inductor and/or capacitor. The intermodulation distortion is found to be dependent on the frequency spacing between driving tones, indicating memory effects.</abstract><pub>IEEE</pub><doi>10.1109/MWSYM.2008.4633288</doi><tpages>4</tpages><oa>free_for_read</oa></addata></record>
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subjects antiresonance
Film bulk acoustic resonators
Frequency measurement
Integrated circuit modeling
intermodulation
Microwave circuits
nonlinear characterization
Power measurement
resonance
Resonant frequency
Thin-film bulk acoustic wave resonators
title Third order intermodulation distortion in Film Bulk Acoustic Resonators at resonance and antiresonance
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-10T15%3A14%3A50IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Third%20order%20intermodulation%20distortion%20in%20Film%20Bulk%20Acoustic%20Resonators%20at%20resonance%20and%20antiresonance&rft.jtitle=2008%20IEEE%20MTT-S%20International%20Microwave%20Symposium%20Digest&rft.au=Rocas,%20Eduard&rft.date=2008-06&rft.spage=1259&rft.epage=1262&rft.pages=1259-1262&rft.issn=0149-645X&rft.eissn=2576-7216&rft.isbn=1424417805&rft.isbn_list=9781424417803&rft_id=info:doi/10.1109/MWSYM.2008.4633288&rft.eisbn=1424417813&rft.eisbn_list=9781424417810&rft_dat=%3Cieee_6IE%3E4633288%3C/ieee_6IE%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-i1308-ba0eafc708258863aa001b3c5f8cb4c9490c96786cb64c673e897ef29d835cac3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=4633288&rfr_iscdi=true