Coalescence overgrowth of GaN nanocolumns

Coalescence overgrowth of GaN nanocolumns on Si and sapphire substrates with metalorganic chemical vapor deposition is implemented to show high crystal and optical qualities. Depth-dependent X-ray diffraction is realized to understand the coalescence growth process.

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Bibliographic Details
Main Authors: Tsung-Yi Tang, Wen-Yu Shiao, Yung-Sheng Chen, Averett, K.L., Albrecht, J.D., Yang, C.C.
Format: Conference Proceeding
Language:English
Subjects:
Crystals
Gallium nitride
MOCVD
Molecular beam epitaxial growth
Silicon
Substrates
X-ray scattering
Online Access:Request full text
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Description
Summary:Coalescence overgrowth of GaN nanocolumns on Si and sapphire substrates with metalorganic chemical vapor deposition is implemented to show high crystal and optical qualities. Depth-dependent X-ray diffraction is realized to understand the coalescence growth process.
DOI:10.1109/INOW.2008.4634477