Coalescence overgrowth of GaN nanocolumns

Coalescence overgrowth of GaN nanocolumns on Si and sapphire substrates with metalorganic chemical vapor deposition is implemented to show high crystal and optical qualities. Depth-dependent X-ray diffraction is realized to understand the coalescence growth process.

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Main Authors: Tsung-Yi Tang, Wen-Yu Shiao, Yung-Sheng Chen, Averett, K.L., Albrecht, J.D., Yang, C.C.
Format: Conference Proceeding
Language:English
Subjects:
Crystals
Gallium nitride
MOCVD
Molecular beam epitaxial growth
Silicon
Substrates
X-ray scattering
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container_start_page 125
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creator Tsung-Yi Tang
Wen-Yu Shiao
Yung-Sheng Chen
Averett, K.L.
Albrecht, J.D.
Yang, C.C.
description Coalescence overgrowth of GaN nanocolumns on Si and sapphire substrates with metalorganic chemical vapor deposition is implemented to show high crystal and optical qualities. Depth-dependent X-ray diffraction is realized to understand the coalescence growth process.
doi_str_mv 10.1109/INOW.2008.4634477
format conference_proceeding
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Crystals
Gallium nitride
MOCVD
Molecular beam epitaxial growth
Silicon
Substrates
X-ray scattering
title Coalescence overgrowth of GaN nanocolumns
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