Intraband radiative and nonradiative transitions of carriers confined in Si nanocrystals

Rates of spontaneous optical intraband transitions are determined. Huang-Rhys factor controlling the hole relaxation is calculated. The rate of hole relaxation due to the emission of multiple optical phonons is estimated. A new mechanism of electron nonradiative relaxation is proposed. This work was...

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Bibliographic Details
Main Authors: Poddubny, A.N., Prokofiev, A.A., Moskalenko, A.S., Goupalov, S.V., Yassievich, I.N.
Format: Conference Proceeding
Language:English
Subjects:
Charge carrier processes
Integrated optics
Phonons
Photonics
Silicon
Stimulated emission
Vibrations
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Summary:Rates of spontaneous optical intraband transitions are determined. Huang-Rhys factor controlling the hole relaxation is calculated. The rate of hole relaxation due to the emission of multiple optical phonons is estimated. A new mechanism of electron nonradiative relaxation is proposed. This work was supported by RFBR and the ldquoDynastyrdquo Foundation - ICFPM.
ISSN:1949-2081
1949-209X
DOI:10.1109/GROUP4.2008.4638103