A leakage current model for SOI based floating body memory that includes the Poole-Frenkel effect

The leakage current of SOI based Floating Body Memory (FBM) has been modeled. The model takes into account oxide/SOI interface traps (D it ) and Electric Field Enhanced (EFE) generation of electron hole pairs (EHPs) from trap states via the Poole-Frenkel Effect (PFE). This model has been used to imp...

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Bibliographic Details
Main Authors: Nayfeh, A., Koldyaev, V., Beaud, P., Nagoga, M., Okhonin, S.
Format: Conference Proceeding
Language:English
Subjects:
Charge pumps
Electric fields
Leakage current
Logic gates
Radiative recombination
Silicon
Transistors
Online Access:Request full text
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Description
Summary:The leakage current of SOI based Floating Body Memory (FBM) has been modeled. The model takes into account oxide/SOI interface traps (D it ) and Electric Field Enhanced (EFE) generation of electron hole pairs (EHPs) from trap states via the Poole-Frenkel Effect (PFE). This model has been used to improve the retention time of Z-RAM by a reduction of both D it and electric field. It can also be extended to SOI based low power devices.
ISSN:1078-621X
2577-2295
DOI:10.1109/SOI.2008.4656301