Charge carrier transport in SiC Schottky interfaces: Shape factor approach

Modelling of SiC based Schottky interfaces using shape factor (SF) is a novel approach for the SiC Schottky interfaces. The determining of the behaviour of the charge carrier transport under influence of the change of parameters like impurity concentration, barrier height and ambient temperature is...

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Bibliographic Details
Main Authors: Kurel, R., Rang, T., Rang, G., Kasemaa, A.
Format: Conference Proceeding
Language:English
Subjects:
Charge carriers
Current-voltage characteristics
Equations
Impurities
Mathematical model
Shape
Temperature
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Summary:Modelling of SiC based Schottky interfaces using shape factor (SF) is a novel approach for the SiC Schottky interfaces. The determining of the behaviour of the charge carrier transport under influence of the change of parameters like impurity concentration, barrier height and ambient temperature is discussed. Unified handling methodology has been demonstrated.
ISSN:1736-3705
DOI:10.1109/BEC.2008.4657484