Special RF/microwave devices in Silicon-on-Glass Technology

This paper reviews special RF/microwave silicon device implementations in the back-wafer contacted Silicon-On-Glass (SOG) Substrate-Transfer Technology (STT) developed at DIMES. In this technology, metal transmission lines can be placed on the low-loss glass substrate, while the resistive/capacitive...

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Main Authors: Nanver, L.K., Schellevis, H., Scholtes, T., La Spina, L., Lorito, G., Sarubbi, F., Gonda, V., Popadic, M., Buisman, K., de Vreede, L., Huang, C., Milosavljevic, S., Goudena, E.
Format: Conference Proceeding
Language:English
Subjects:
Adaptive circuits
aluminum nitride deposition
complementary bipolar silicon technology
Heating
Radio frequency
Resistance
Silicon
Silicon germanium
silicon-on-glass technology
substrate transfer
Substrates
thin-film heatspreading
Varactors
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Summary:This paper reviews special RF/microwave silicon device implementations in the back-wafer contacted Silicon-On-Glass (SOG) Substrate-Transfer Technology (STT) developed at DIMES. In this technology, metal transmission lines can be placed on the low-loss glass substrate, while the resistive/capacitive parasitics of the silicon devices can be minimized by a direct two-sided contacting. Focus is placed here on the device level aspects of the SOG process. In particular, complementary bipolar device integration and high-quality varactors for high-linearity adaptive circuits are treated in relationship to developments in back-wafer contacting and the integration of AlN heatspreaders.
ISSN:1088-9299
2378-590X
DOI:10.1109/BIPOL.2008.4662707