0.13μm SiGe BiCMOS technology for mm-wave applications

This paper presents a complete 0.13 mum SiGe BiCMOS technology fully dedicated to millimeter-wave applications, including a high-speed (230/280GHz f T /f MAX ) and medium voltage SiGe HBT, thick-copper back-end designed for high performance transmission lines and inductors, 2fF/mum 2 high-linearity...

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Bibliographic Details
Main Authors: Avenier, G., Chevalier, P., Troillard, G., Vandelle, B., Brossard, F., Depoyan, L., Buczko, M., Boret, S., Montusclat, S., Margain, A., Pruvost, S., Nicolson, S.T., Yau, K.H.K., Gloria, D., Dutartre, D., Voinigescu, S.P., Chantre, A.
Format: Conference Proceeding
Language:English
Subjects:
BiCMOS integrated circuits
BiCMOS integrated circuits technology
CMOS integrated circuits
CMOS technology
Copper
Heterojunction bipolar transistor (HBT)
Heterojunction bipolar transistors
Integrated circuit fabrication
Logic gates
Millimeter wave technology
Silicon germanium
Silicon Germanium (SiGe)
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Summary:This paper presents a complete 0.13 mum SiGe BiCMOS technology fully dedicated to millimeter-wave applications, including a high-speed (230/280GHz f T /f MAX ) and medium voltage SiGe HBT, thick-copper back-end designed for high performance transmission lines and inductors, 2fF/mum 2 high-linearity MIM capacitor and complementary double gate oxide MOS transistors.
ISSN:1088-9299
2378-590X
DOI:10.1109/BIPOL.2008.4662719