Demonstration of a 270 GHz fT SiGe-C HBT within a manufacturing-proven 0.18μm BiCMOS process without the use of a raised extrinsic base

SiGe bipolar transistors with F T of 270 GHz are integrated within a standard 0.18 mum CMOS process flow. These devices are built using the same architecture as Jazzpsila SBC18 SiGe BiCMOS process which has been in high-volume manufacturing for several years. The transistors have an F MAX of 170 GHz...

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Bibliographic Details
Main Authors: Preisler, E., Lanzerotti, L., Hurwitz, P.D., Racanelli, M.
Format: Conference Proceeding
Language:English
Subjects:
BiCMOS integrated circuits
Heterojunction bipolar transistors
Implants
Manufacturing
Optimization
Resistance
Silicon germanium
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Summary:SiGe bipolar transistors with F T of 270 GHz are integrated within a standard 0.18 mum CMOS process flow. These devices are built using the same architecture as Jazzpsila SBC18 SiGe BiCMOS process which has been in high-volume manufacturing for several years. The transistors have an F MAX of 170 GHz but a path to achieving an F MAX equal to F T is demonstrated without the use of selective SiGe epitaxy or raised extrinsic base poly layers. Data is shown that suggests that the target of 270 GHz F MAX can be achieved through a combination of modest design rule changes and optimization of extrinsic base doping conditions.
ISSN:1088-9299
2378-590X
DOI:10.1109/BIPOL.2008.4662728