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A 35 GS/s 5-Bit SiGe BiCMOS flash ADC with offset corrected exclusive-or comparator
The design and wafer probe test results of a 5-bit SiGe ADC are presented. The integrated circuit, fabricated in a 200/250 GHz f T /F max , SiGe BiCMOS technology, provides a 5-bit analog to digital conversion with input tone frequencies up to 20 GHz and sampling clock rates up to 35 GS/s. The ADC m...
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creator | Kertis, R.A. Humble, J.S. Daun-Lindberg, M.A. Philpott, R.A. Fritz, K.A. Schwab, D.J. Prairie, J.F. Gilbert, B.K. Daniel, E.S. |
description | The design and wafer probe test results of a 5-bit SiGe ADC are presented. The integrated circuit, fabricated in a 200/250 GHz f T /F max , SiGe BiCMOS technology, provides a 5-bit analog to digital conversion with input tone frequencies up to 20 GHz and sampling clock rates up to 35 GS/s. The ADC makes use of a comparator with an integrated exclusive-or function to reduce power consumption. The device also generates two half-rate interleaved outputs to ease in data capturing with laboratory equipment. An effective number of bits (ENOB) of nearly 5.0 is achieved for low frequency input tones, dropping to 4.0 at 10 GHz. |
doi_str_mv | 10.1109/BIPOL.2008.4662755 |
format | conference_proceeding |
fullrecord | <record><control><sourceid>ieee_CHZPO</sourceid><recordid>TN_cdi_ieee_primary_4662755</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4662755</ieee_id><sourcerecordid>4662755</sourcerecordid><originalsourceid>FETCH-LOGICAL-c224t-127e8ffd14a3445f412906bdba8b22265ceb66280f18624ab5f0c814113e946f3</originalsourceid><addsrcrecordid>eNo1kNtqAjEURdMbVK0_0L7kB6LJyWWSRx1bK1gsTAt9k8x4ginKSDK9_X2F2qcNe8OCtQm5FXwkBHfj6eJ5tRwB53akjIFC6zPSFwqUggKMOSc9kIVl2vG3CzJ0hf3ftLwkPcGtZQ6cuyb9nN85Bw6F7ZFqQqWm82qcqWbT2NEqzpFOY_m0qmjY-bylk1lJv2K3pW0IGTvatClh0-GG4nez-8jxE1mbjvX-4JPv2nRDroLfZRyeckBeH-5fyke2XM0X5WTJGgDVMQEF2hA2QnmplA5KgOOm3tTe1gBgdIP1UdTyIKwB5WsdeHO0EkKiUybIAbn740ZEXB9S3Pv0sz6dI38BUuxRcw</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>A 35 GS/s 5-Bit SiGe BiCMOS flash ADC with offset corrected exclusive-or comparator</title><source>IEEE Xplore All Conference Series</source><creator>Kertis, R.A. ; Humble, J.S. ; Daun-Lindberg, M.A. ; Philpott, R.A. ; Fritz, K.A. ; Schwab, D.J. ; Prairie, J.F. ; Gilbert, B.K. ; Daniel, E.S.</creator><creatorcontrib>Kertis, R.A. ; Humble, J.S. ; Daun-Lindberg, M.A. ; Philpott, R.A. ; Fritz, K.A. ; Schwab, D.J. ; Prairie, J.F. ; Gilbert, B.K. ; Daniel, E.S.</creatorcontrib><description>The design and wafer probe test results of a 5-bit SiGe ADC are presented. The integrated circuit, fabricated in a 200/250 GHz f T /F max , SiGe BiCMOS technology, provides a 5-bit analog to digital conversion with input tone frequencies up to 20 GHz and sampling clock rates up to 35 GS/s. The ADC makes use of a comparator with an integrated exclusive-or function to reduce power consumption. The device also generates two half-rate interleaved outputs to ease in data capturing with laboratory equipment. An effective number of bits (ENOB) of nearly 5.0 is achieved for low frequency input tones, dropping to 4.0 at 10 GHz.</description><identifier>ISSN: 1088-9299</identifier><identifier>ISBN: 9781424427253</identifier><identifier>ISBN: 1424427258</identifier><identifier>EISSN: 2378-590X</identifier><identifier>EISBN: 1424427266</identifier><identifier>EISBN: 9781424427260</identifier><identifier>DOI: 10.1109/BIPOL.2008.4662755</identifier><language>eng</language><publisher>IEEE</publisher><subject>Bandwidth ; BiCMOS integrated circuits ; Clocks ; Driver circuits ; Frequency measurement ; Gain ; Silicon germanium</subject><ispartof>2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2008, p.252-255</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c224t-127e8ffd14a3445f412906bdba8b22265ceb66280f18624ab5f0c814113e946f3</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4662755$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,27925,54555,54920,54932</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4662755$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Kertis, R.A.</creatorcontrib><creatorcontrib>Humble, J.S.</creatorcontrib><creatorcontrib>Daun-Lindberg, M.A.</creatorcontrib><creatorcontrib>Philpott, R.A.</creatorcontrib><creatorcontrib>Fritz, K.A.</creatorcontrib><creatorcontrib>Schwab, D.J.</creatorcontrib><creatorcontrib>Prairie, J.F.</creatorcontrib><creatorcontrib>Gilbert, B.K.</creatorcontrib><creatorcontrib>Daniel, E.S.</creatorcontrib><title>A 35 GS/s 5-Bit SiGe BiCMOS flash ADC with offset corrected exclusive-or comparator</title><title>2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting</title><addtitle>BIPOL</addtitle><description>The design and wafer probe test results of a 5-bit SiGe ADC are presented. The integrated circuit, fabricated in a 200/250 GHz f T /F max , SiGe BiCMOS technology, provides a 5-bit analog to digital conversion with input tone frequencies up to 20 GHz and sampling clock rates up to 35 GS/s. The ADC makes use of a comparator with an integrated exclusive-or function to reduce power consumption. The device also generates two half-rate interleaved outputs to ease in data capturing with laboratory equipment. An effective number of bits (ENOB) of nearly 5.0 is achieved for low frequency input tones, dropping to 4.0 at 10 GHz.</description><subject>Bandwidth</subject><subject>BiCMOS integrated circuits</subject><subject>Clocks</subject><subject>Driver circuits</subject><subject>Frequency measurement</subject><subject>Gain</subject><subject>Silicon germanium</subject><issn>1088-9299</issn><issn>2378-590X</issn><isbn>9781424427253</isbn><isbn>1424427258</isbn><isbn>1424427266</isbn><isbn>9781424427260</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2008</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNo1kNtqAjEURdMbVK0_0L7kB6LJyWWSRx1bK1gsTAt9k8x4ginKSDK9_X2F2qcNe8OCtQm5FXwkBHfj6eJ5tRwB53akjIFC6zPSFwqUggKMOSc9kIVl2vG3CzJ0hf3ftLwkPcGtZQ6cuyb9nN85Bw6F7ZFqQqWm82qcqWbT2NEqzpFOY_m0qmjY-bylk1lJv2K3pW0IGTvatClh0-GG4nez-8jxE1mbjvX-4JPv2nRDroLfZRyeckBeH-5fyke2XM0X5WTJGgDVMQEF2hA2QnmplA5KgOOm3tTe1gBgdIP1UdTyIKwB5WsdeHO0EkKiUybIAbn740ZEXB9S3Pv0sz6dI38BUuxRcw</recordid><startdate>200810</startdate><enddate>200810</enddate><creator>Kertis, R.A.</creator><creator>Humble, J.S.</creator><creator>Daun-Lindberg, M.A.</creator><creator>Philpott, R.A.</creator><creator>Fritz, K.A.</creator><creator>Schwab, D.J.</creator><creator>Prairie, J.F.</creator><creator>Gilbert, B.K.</creator><creator>Daniel, E.S.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>200810</creationdate><title>A 35 GS/s 5-Bit SiGe BiCMOS flash ADC with offset corrected exclusive-or comparator</title><author>Kertis, R.A. ; Humble, J.S. ; Daun-Lindberg, M.A. ; Philpott, R.A. ; Fritz, K.A. ; Schwab, D.J. ; Prairie, J.F. ; Gilbert, B.K. ; Daniel, E.S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c224t-127e8ffd14a3445f412906bdba8b22265ceb66280f18624ab5f0c814113e946f3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Bandwidth</topic><topic>BiCMOS integrated circuits</topic><topic>Clocks</topic><topic>Driver circuits</topic><topic>Frequency measurement</topic><topic>Gain</topic><topic>Silicon germanium</topic><toplevel>online_resources</toplevel><creatorcontrib>Kertis, R.A.</creatorcontrib><creatorcontrib>Humble, J.S.</creatorcontrib><creatorcontrib>Daun-Lindberg, M.A.</creatorcontrib><creatorcontrib>Philpott, R.A.</creatorcontrib><creatorcontrib>Fritz, K.A.</creatorcontrib><creatorcontrib>Schwab, D.J.</creatorcontrib><creatorcontrib>Prairie, J.F.</creatorcontrib><creatorcontrib>Gilbert, B.K.</creatorcontrib><creatorcontrib>Daniel, E.S.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library Online</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kertis, R.A.</au><au>Humble, J.S.</au><au>Daun-Lindberg, M.A.</au><au>Philpott, R.A.</au><au>Fritz, K.A.</au><au>Schwab, D.J.</au><au>Prairie, J.F.</au><au>Gilbert, B.K.</au><au>Daniel, E.S.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>A 35 GS/s 5-Bit SiGe BiCMOS flash ADC with offset corrected exclusive-or comparator</atitle><btitle>2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting</btitle><stitle>BIPOL</stitle><date>2008-10</date><risdate>2008</risdate><spage>252</spage><epage>255</epage><pages>252-255</pages><issn>1088-9299</issn><eissn>2378-590X</eissn><isbn>9781424427253</isbn><isbn>1424427258</isbn><eisbn>1424427266</eisbn><eisbn>9781424427260</eisbn><abstract>The design and wafer probe test results of a 5-bit SiGe ADC are presented. The integrated circuit, fabricated in a 200/250 GHz f T /F max , SiGe BiCMOS technology, provides a 5-bit analog to digital conversion with input tone frequencies up to 20 GHz and sampling clock rates up to 35 GS/s. The ADC makes use of a comparator with an integrated exclusive-or function to reduce power consumption. The device also generates two half-rate interleaved outputs to ease in data capturing with laboratory equipment. An effective number of bits (ENOB) of nearly 5.0 is achieved for low frequency input tones, dropping to 4.0 at 10 GHz.</abstract><pub>IEEE</pub><doi>10.1109/BIPOL.2008.4662755</doi><tpages>4</tpages></addata></record> |
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identifier | ISSN: 1088-9299 |
ispartof | 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2008, p.252-255 |
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language | eng |
recordid | cdi_ieee_primary_4662755 |
source | IEEE Xplore All Conference Series |
subjects | Bandwidth BiCMOS integrated circuits Clocks Driver circuits Frequency measurement Gain Silicon germanium |
title | A 35 GS/s 5-Bit SiGe BiCMOS flash ADC with offset corrected exclusive-or comparator |
url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T07%3A00%3A09IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_CHZPO&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=A%2035%20GS/s%205-Bit%20SiGe%20BiCMOS%20flash%20ADC%20with%20offset%20corrected%20exclusive-or%20comparator&rft.btitle=2008%20IEEE%20Bipolar/BiCMOS%20Circuits%20and%20Technology%20Meeting&rft.au=Kertis,%20R.A.&rft.date=2008-10&rft.spage=252&rft.epage=255&rft.pages=252-255&rft.issn=1088-9299&rft.eissn=2378-590X&rft.isbn=9781424427253&rft.isbn_list=1424427258&rft_id=info:doi/10.1109/BIPOL.2008.4662755&rft.eisbn=1424427266&rft.eisbn_list=9781424427260&rft_dat=%3Cieee_CHZPO%3E4662755%3C/ieee_CHZPO%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c224t-127e8ffd14a3445f412906bdba8b22265ceb66280f18624ab5f0c814113e946f3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=4662755&rfr_iscdi=true |