The use of Abel-Tersoff potentials in atomistic simulations of InGaAsSb/GaAs

In this paper we show the use of an optimally parameterized empirical potential of the Abell-Tersoff type for atomistic simulations of the elastic properties of the epitaxially grown quaternary alloy InGaAsSb. We find that the strain energy as a function of composition does not follow intuitive aver...

Full description

Saved in:
Bibliographic Details
Main Authors: Haxha, V., Garg, R., Migliorato, M.A., Drouzas, I.W., Ulloa, J.M., Koenraad, P.M., Steer, M.J., Liu, H.Y., Hopkinson, M., Mowbray, D.J.
Format: Conference Proceeding
Language:English
Subjects:
Atomic layer deposition
Capacitive sensors
Gallium arsenide
III-V semiconductor materials
Lattices
Physics
Potential energy
Semiconductor materials
Semiconductor process modeling
Substrates
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this paper we show the use of an optimally parameterized empirical potential of the Abell-Tersoff type for atomistic simulations of the elastic properties of the epitaxially grown quaternary alloy InGaAsSb. We find that the strain energy as a function of composition does not follow intuitive averages between the binary constituents. Furthermore we will provide an explanation for the often observed decomposition into ternary components. The predictions of our model appear to be substantiated by experimental evidence of growth of InAs self assembled quantum dots capped by GaSbAs.
ISSN:2158-3234
DOI:10.1109/NUSOD.2008.4668267