Complex modification of the semiconductor laser active area for efficient carriers transport

In the work, it is proposed iterative model for calculation of spatial-energy carrierspsila distribution in multiple quantum well heterostructure. The model takes into consideration the influence of non-uniform charge distribution on the potential profile. It is discussed the influence of different...

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Bibliographic Details
Main Authors: Safonov, I.M., Klymenko, M.V., Shulika, O.V., Sukhoivanov, I.A.
Format: Conference Proceeding
Language:English
Subjects:
Geometrical optics
Laser modes
Optical recording
Power generation
Quantum well lasers
Semiconductor lasers
Online Access:Request full text
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Summary:In the work, it is proposed iterative model for calculation of spatial-energy carrierspsila distribution in multiple quantum well heterostructure. The model takes into consideration the influence of non-uniform charge distribution on the potential profile. It is discussed the influence of different ways of the structure modification on the carriers transport rate. It is proposed the methodology of complex modification of the geometry of an active area for laser efficiency increase. Some attractive results of the modeling are implemented experimentally both for optically and electrically-pumped structures and have provided record values of the efficiency and output power.
DOI:10.1109/LFNM.2008.4670377