Optical phonon instability caused by ultra-high-speed electron transport in nanoscale samples

We investigated ultra-high frequency electrical properties of nanoscale n+-i-n+ diodes made of polar semiconductors. We found the optical vibrations instability and the large effect of the negative dynamic resistance. These effects indicate that the nanoscale diodes are capable of generating electro...

Full description

Saved in:
Bibliographic Details
Main Authors: Kochelap, V.A., Klimov, A.A., Korotyeyev, V.V., Kim, K.W.
Format: Conference Proceeding
Language:English
Subjects:
Ballistic diodes
Electromagnetic radiation
Electron optics
Frequency
High speed optical techniques
optical phonons
Optical pumping
Permittivity
Phonons
Physics
Poisson equations
Semiconductor diodes
THz instability
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We investigated ultra-high frequency electrical properties of nanoscale n+-i-n+ diodes made of polar semiconductors. We found the optical vibrations instability and the large effect of the negative dynamic resistance. These effects indicate that the nanoscale diodes are capable of generating electromagnetic radiation in the 10 THz range.
ISSN:2160-1518
2160-1534
DOI:10.1109/CAOL.2008.4671902