Terahertz lasers based on nonlinear frequency conversion in silicon

New principals to generate stimulated emission in terahertz frequency range from silicon doped by shallow donor centers have been demonstrated. Lasing in the frequency bands of 1.2 - 1.8 THz; 2.5 - 3.4 THz, 4.6 - 5.8 THz and 6.1 - 6.4 THz, has been achieved from silicon crystals doped by phosphorus...

Full description

Saved in:
Bibliographic Details
Main Authors: Pavlov, S.G., Hubers, H.-W., Bottger, U., Zhukavin, R.Kh, Shastin, V.N., Hovenier, J.N., Redlich, B.
Format: Conference Proceeding
Language:English
Subjects:
Cryogenics
Crystals
Data analysis
Free electron lasers
Frequency conversion
nonlinear optics
Optical pumping
Pump lasers
Silicon
silicon laser
Stimulated emission
Temperature
terahertz laser
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:New principals to generate stimulated emission in terahertz frequency range from silicon doped by shallow donor centers have been demonstrated. Lasing in the frequency bands of 1.2 - 1.8 THz; 2.5 - 3.4 THz, 4.6 - 5.8 THz and 6.1 - 6.4 THz, has been achieved from silicon crystals doped by phosphorus and antimony to around 10 15 cm -3 under optical pumping by radiation of mid-infrared free electron laser at cryogenic temperatures. Analysis of the data shows that the emission from silicon in the high-frequency bands corresponds to Stokes-shifted Raman-type lasing, the shift is determined by the 1s(E)-1s(A 1 ) donor electronic resonance. The low-frequency bands indicate on high-order nonlinear frequency conversion processes accompanied by high-energy intervalley phonons of host lattice.
ISSN:2160-1518
2160-1534
DOI:10.1109/CAOL.2008.4671947