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Terahertz lasers based on nonlinear frequency conversion in silicon

New principals to generate stimulated emission in terahertz frequency range from silicon doped by shallow donor centers have been demonstrated. Lasing in the frequency bands of 1.2 - 1.8 THz; 2.5 - 3.4 THz, 4.6 - 5.8 THz and 6.1 - 6.4 THz, has been achieved from silicon crystals doped by phosphorus...

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Main Authors:	Pavlov, S.G., Hubers, H.-W., Bottger, U., Zhukavin, R.Kh, Shastin, V.N., Hovenier, J.N., Redlich, B.
Format:	Conference Proceeding
Language:	English
Subjects:	Cryogenics Crystals Data analysis Free electron lasers Frequency conversion nonlinear optics Optical pumping Pump lasers Silicon silicon laser Stimulated emission Temperature terahertz laser
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creator	Pavlov, S.G. Hubers, H.-W. Bottger, U. Zhukavin, R.Kh Shastin, V.N. Hovenier, J.N. Redlich, B.
description	New principals to generate stimulated emission in terahertz frequency range from silicon doped by shallow donor centers have been demonstrated. Lasing in the frequency bands of 1.2 - 1.8 THz; 2.5 - 3.4 THz, 4.6 - 5.8 THz and 6.1 - 6.4 THz, has been achieved from silicon crystals doped by phosphorus and antimony to around 10 15 cm -3 under optical pumping by radiation of mid-infrared free electron laser at cryogenic temperatures. Analysis of the data shows that the emission from silicon in the high-frequency bands corresponds to Stokes-shifted Raman-type lasing, the shift is determined by the 1s(E)-1s(A 1 ) donor electronic resonance. The low-frequency bands indicate on high-order nonlinear frequency conversion processes accompanied by high-energy intervalley phonons of host lattice.
doi_str_mv	10.1109/CAOL.2008.4671947
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source	IEEE Xplore All Conference Series
subjects	Cryogenics Crystals Data analysis Free electron lasers Frequency conversion nonlinear optics Optical pumping Pump lasers Silicon silicon laser Stimulated emission Temperature terahertz laser
title	Terahertz lasers based on nonlinear frequency conversion in silicon
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