GaN MMIC PAs for E-Band (71 GHz - 95 GHz) Radio

High data rate E-band (71 GHz- 76 GHz, 81 GHz - 86 GHz, 92 GHz - 95 GHz) communication systems will benefit from power amplifiers that are more than twice as powerful than commercially available GaAs pHEMT MMICs. We report development of three stage GaN MMIC power amplifiers for E-band radio applica...

Full description

Saved in:
Bibliographic Details
Main Authors: Micovic, M., Kurdoghlian, A., Moyer, H.P., Hashimoto, P., Hu, M., Antcliffe, M., Willadsen, P.J., Wong, W.S., Bowen, R., Milosavljevic, I., Yoon, Y., Schmitz, A., Wetzel, M., McGuire, C., Hughes, B., Chow, D.H.
Format: Conference Proceeding
Language:eng ; jpn
Subjects:
Field effect MMICs
Frequency
Gallium arsenide
Gallium nitride
HEMTs
Indium phosphide
PHEMTs
Power amplifiers
Power generation
Silicon carbide
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:High data rate E-band (71 GHz- 76 GHz, 81 GHz - 86 GHz, 92 GHz - 95 GHz) communication systems will benefit from power amplifiers that are more than twice as powerful than commercially available GaAs pHEMT MMICs. We report development of three stage GaN MMIC power amplifiers for E-band radio applications that produce 500 mW of saturated output power in CW mode and have > 12 dB of associated power gain. The output power density from 300 mum output gate width GaN MMICs is seven times higher than the power density of commercially available GaAs pHEMT MMICs in this frequency range.
ISSN:1550-8781
2374-8443
DOI:10.1109/CSICS.2008.7