State of the Art 58W, 38% PAE X-Band AlGaN/GaN HEMTs Microstrip MMIC Amplifiers

This paper presents the results obtained on X-Band GaN MMICs developed in the frame of the Kerrigan project launched by the European Defense Agency. A new step was achieved, 58 W of output power with 38% PAE in X-Band were obtained using an 18 mm 2 2-stages amplifier. To our knowledge, these results...

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Main Authors: Piotrowicz, S., Morvan, E., Aubry, R., Bansropun, S., Bouvet, T., Chartier, E., Dean, T., Drisse, O., Dua, C., Floriot, D., diForte Poisson, M.A., Gourdel, Y., Hydes, A.J., Jacquet, J.C., Jardel, O., Lancereau, D., McLean, J.O., Lecoustre, G., Martin, A., Ouarch, Z., Reveyrand, T., Richard, M., Sarazin, N., Thenot, D., Delage, S.L.
Format: Conference Proceeding
Language:eng ; jpn
Subjects:
Aluminum gallium nitride
Gallium nitride
Gold
HEMTs
Microstrip
MMICs
MODFETs
Power amplifiers
Power generation
Pulse amplifiers
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Summary:This paper presents the results obtained on X-Band GaN MMICs developed in the frame of the Kerrigan project launched by the European Defense Agency. A new step was achieved, 58 W of output power with 38% PAE in X-Band were obtained using an 18 mm 2 2-stages amplifier. To our knowledge, these results present a new state-of-the-art of X-Band MMIC power amplifiers.
ISSN:1550-8781
2374-8443
DOI:10.1109/CSICS.2008.39