X-band MMIC broadband low-noise amplifiers based on 0.15 μm GaAs pHEMT technology

The design and fabrication of 2- and 3-stage X-band MMIC broadband low-noise amplifiers (LNApsilas) based on 0.15 mum GaAs pHEMT technology is presented. The design and fabrication of 2- and 3-stage X-band MMIC broadband LNApsilas is described. LNApsilas are designed with using ldquovisualrdquo desi...

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Bibliographic Details
Main Authors: Mokerov, V.G., Babak, L.I., Fedorov, Yu.V., Cherkashin, M.V., Sheherman, F.I., Bugaev, A.S., Kuznetsov, A.L., Gnatyuk, D.L.
Format: Conference Proceeding
Language:English
Subjects:
Broadband amplifiers
Design automation
Fabrication
Gallium arsenide
Low-noise amplifiers
MMICs
Noise figure
Noise measurement
PHEMTs
Scattering parameters
Online Access:Request full text
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Summary:The design and fabrication of 2- and 3-stage X-band MMIC broadband low-noise amplifiers (LNApsilas) based on 0.15 mum GaAs pHEMT technology is presented. The design and fabrication of 2- and 3-stage X-band MMIC broadband LNApsilas is described. LNApsilas are designed with using ldquovisualrdquo design CAD tools. MMICpsilas are implemented with 0.15 mum pHEMT GaAs technology. The measured scattering parameters and noise figure are presented. Amplifiers cover frequency range from 3 GHz to 14 GHz with the gain of 20...21 dB and 27...29 dB, correspondingly. MMIC LNApsilas can be used as building blocks in different microwave systems.
DOI:10.1109/CRMICO.2008.4676291