Semiconductor surface quality influence on MESFET's parameters

Surface energy states form parasitic p-n junction which influences greatly not only MESFETpsilas breakdown voltage but also its microwave parameters.

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Bibliographic Details
Main Authors: Martynov, Y.B., Pogorelova, E.W.
Format: Conference Proceeding
Language:English
Subjects:
MESFETs
Online Access:Request full text
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Description
Summary:Surface energy states form parasitic p-n junction which influences greatly not only MESFETpsilas breakdown voltage but also its microwave parameters.
DOI:10.1109/CRMICO.2008.4676329