Effects of terahertz radiation generation by homogeneous laser-excited semiconductors

Theoretical explanation of magnetic field impact on terahertz radiation generation by femtosecond-laser-excited narrow band-gap semiconductors is proposed. Surface depletion electric field screening influence on terahertz emission by means of nonlinear optical rectification is analyzed. Free-carrier...

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Bibliographic Details
Main Authors: Ziaziulia, P.A., Malevich, V.L., Manak, I.S.
Format: Conference Proceeding
Language:English
Subjects:
Analytical models
Gallium arsenide
IEEE catalog
Microwave technology
Organizing
Semiconductor lasers
Online Access:Request full text
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Summary:Theoretical explanation of magnetic field impact on terahertz radiation generation by femtosecond-laser-excited narrow band-gap semiconductors is proposed. Surface depletion electric field screening influence on terahertz emission by means of nonlinear optical rectification is analyzed. Free-carrier electro-optical effect in semiconductors in the presence of the constant electric field is investigated.
DOI:10.1109/CRMICO.2008.4676543