On the role of a HTO/Al2O3 bi-layer blocking oxide in nitride-trap non-volatile memories

In this work, we present an experimental and theoretical study of nitride trap devices with a HTO/Al 2 O 3 bi-layer blocking oxide. Such SAONOS (Silicon/Alumina/HTO/Nitride/Oxide/Silicon) devices are compared with standard SONOS (Silicon/HTO/Nitride/Oxide/Silicon) and SANOS (Silicon/Alumina/Nitride/...

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Main Authors: Bocquet, M., Molas, G., Perniola, L., Garros, X., Buckley, J., Gely, M., Colonna, J.P., Grampeix, H., Martin, F., Vidal, V., Toffoli, A., De Salvo, B., Deleonibus, S., Pananakakis, G., Ghibaudo, G.
Format: Conference Proceeding
Language:English
Subjects:
Aluminum oxide
Charge carrier processes
High K dielectric materials
High-K gate dielectrics
MOSFETs
Nonvolatile memory
Performance analysis
Silicon
SONOS devices
Tunneling
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Summary:In this work, we present an experimental and theoretical study of nitride trap devices with a HTO/Al 2 O 3 bi-layer blocking oxide. Such SAONOS (Silicon/Alumina/HTO/Nitride/Oxide/Silicon) devices are compared with standard SONOS (Silicon/HTO/Nitride/Oxide/Silicon) and SANOS (Silicon/Alumina/Nitride/Oxide/Silicon) memories. The role of the different layers (blocking oxide and control gate) is deeply analyzed, focusing on their impact on memory performance and reliability. Then, a semi-analytical model is developed, which provides a good understanding of the physical mechanisms at the origin of program/erase characteristics.
ISSN:1930-8876
DOI:10.1109/ESSDERC.2008.4681713