Origin of the flat-band voltage (Vfb) roll-off phenomenon in metal/high-k gate stacks

Effect of the flat band voltage reduction (roll-off) in highly scaled high-k/metal gate stacks is discussed. The proposed mechanism explains the roll-off phenomenon as caused by the metal electrode/high-k dielectric-induced generation of positively charged oxygen vacancies in the interfacial SiO 2 l...

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Bibliographic Details
Main Authors: Bersuker, G., Park, C.S., Wen, H.C., Choi, K., Sharia, O., Demkov, A.
Format: Conference Proceeding
Language:English
Subjects:
Capacitors
Channel bank filters
CMOS technology
Dielectric substrates
Electrodes
High K dielectric materials
High-K gate dielectrics
Temperature dependence
Testing
Voltage
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Summary:Effect of the flat band voltage reduction (roll-off) in highly scaled high-k/metal gate stacks is discussed. The proposed mechanism explains the roll-off phenomenon as caused by the metal electrode/high-k dielectric-induced generation of positively charged oxygen vacancies in the interfacial SiO 2 layer in the high-k dielectric stack. The model is consistent with the observed roll-off dependency on the electrode and substrate type, high-k dielectric composition and thickness, temperature, etc., and its predictions were experimentally verified.
ISSN:1930-8876
DOI:10.1109/ESSDERC.2008.4681717