Performance optimization of room temperature Deflection Transistors through modified geometry

In this paper, the current status of the ballistic deflection transistor (BDT) project is described. The project focuses on a development of a new class of devices based on the steering of the electron flux and the ballistic deflection effect. The results of the latest experiments show significant c...

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Bibliographic Details
Main Authors: Kaushal, V., Diduck, Q., Margala, M.
Format: Conference Proceeding
Language:English
Subjects:
Ballistic Transport
Current Steering
Deflection Transistors
Diffusive Transport
Electrons
Geometry
Lithography
Logic
Optimization
Particle scattering
Substrates
Temperature
Transconductance
Voltage
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Summary:In this paper, the current status of the ballistic deflection transistor (BDT) project is described. The project focuses on a development of a new class of devices based on the steering of the electron flux and the ballistic deflection effect. The results of the latest experiments show significant current response improvement through optimized geometry modifications.
DOI:10.1109/MNRC.2008.4683399