Highly reliable guardring-free InAlAs avalanche photodiodes

The InAlAs avalanche photodiodes that employ a guardring-free structure demonstrate record high reliability of over 10000 hours at a high temperature of 200degC with no degradation in the surfaced pn-junction.

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Bibliographic Details
Main Authors: Ishimura, E., Yagyu, E., Nakaji, M., Ihara, S., Itamoto, H., Yoshiara, K., Aoyagi, T., Ishikawa, T.
Format: Conference Proceeding
Language:English
Subjects:
Avalanche photodiodes
Dark current
Degradation
Distributed Bragg reflectors
Frequency
Indium compounds
Indium gallium arsenide
Indium phosphide
Temperature
Testing
Online Access:Request full text
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Description
Summary:The InAlAs avalanche photodiodes that employ a guardring-free structure demonstrate record high reliability of over 10000 hours at a high temperature of 200degC with no degradation in the surfaced pn-junction.
ISSN:1092-8081
2766-1733
DOI:10.1109/LEOS.2008.4688535