Loading…

Study of High-Power Wideband Terahertz-Pulse Generation Using Integrated High-Speed Photoconductive Semiconductor Switches

A 3-D finite-difference time-domain analysis of a photoconductive-semiconductor-switch-based terahertz (THz) source, integrated with a standard dipole and a large-aperture radiator, is presented. The simulation analysis is based on the coupling of semiconductor equations for charge transport with Ma...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on plasma science 2009-01, Vol.37 (1), p.219-228
Main Authors: Kirawanich, P., Yakura, S.J., Islam, N.E.
Format: Article
Language:English
Subjects:
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A 3-D finite-difference time-domain analysis of a photoconductive-semiconductor-switch-based terahertz (THz) source, integrated with a standard dipole and a large-aperture radiator, is presented. The simulation analysis is based on the coupling of semiconductor equations for charge transport with Maxwell electromagnetic equations. The simulation provides the transient field redistribution, carrier generation characteristics, and the field acceleration as a result of the bias voltage on the device, contributing to the nonlinear behavior of THz-pulse generation. A comparison of the radiation characteristics of the two antenna types shows that the large-aperture antenna produces approximately three times higher radiation amplitude and broader power spectrum than those produced by the dipole antenna.
ISSN:0093-3813
1939-9375
DOI:10.1109/TPS.2008.2006978