Operation of SOI CMOS devices at liquid-nitrogen temperature

Liquid-nitrogen-temperature (LNT) operation of silicon-on-insulator (SOI) CMOS devices has been investigated experimentally. The maximum carrier mobilities in these devices increase by factors from 1.25 to 4.5 between room temperature and LNT. At LNT, the increase in depletion-layer width and the re...

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Bibliographic Details
Published in:IEEE electron device letters 1990-03, Vol.11 (3), p.126-128
Main Authors: Young, K.K., Tsaur, B.-Y.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Immune system
Laboratories
MOSFET circuits
Plasma measurements
Plasma temperature
Scattering
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor films
Silicon
Substrates
Threshold voltage
Transistors
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Summary:Liquid-nitrogen-temperature (LNT) operation of silicon-on-insulator (SOI) CMOS devices has been investigated experimentally. The maximum carrier mobilities in these devices increase by factors from 1.25 to 4.5 between room temperature and LNT. At LNT, the increase in depletion-layer width and the resulting threshold-voltage increase are limited by the silicon film thickness. For SOI devices with a body contact, the series resistance between channel and body contact increases at lower temperature, resulting in a current kink in saturation I-V characteristics.< >
ISSN:0741-3106
1558-0563
DOI:10.1109/55.46955