Investigation of impact ionization from InxGa1-xAs to InAs Channel HEMTs for high speed and low power applications

80-nm high electron mobility transistors (HEMTs) with different indium content in In x Ga 1-x As channel from 52%, 70% to 100% have been fabricated. Device performance degradation were observed on the DC measurement and RF characteristics caused by impact ionization at different drain bias, >0.8...

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Bibliographic Details
Main Authors: Kuo, Chien-I, Hsu, Heng-Tung, Chang, Edward Yi, Chang, Chia-Ta, Chang, Chia-Yuan, Miyamoto, Yasuyuki
Format: Conference Proceeding
Language:English
Subjects:
Degradation
HEMTs
Impact ionization
InAs-channel
Indium
InGaAs-channel
Materials science and technology
MODFETs
Photonic band gap
Power engineering and energy
Radio frequency
Transconductance
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Summary:80-nm high electron mobility transistors (HEMTs) with different indium content in In x Ga 1-x As channel from 52%, 70% to 100% have been fabricated. Device performance degradation were observed on the DC measurement and RF characteristics caused by impact ionization at different drain bias, >0.8 V (InAs/In 0.7 Ga 0.3 As), >1 V (In 0.7 Ga 0.3 As) and >1.5 V (In 0.52 Ga 0.48 As), respectively. The impact ionization phenomenon should be avoided for high speed, low power application because it limits the highest drain bias of the device which in turn limits the drift velocity under specific applied electric field.
ISSN:1092-8669
DOI:10.1109/ICIPRM.2008.4702949