Refractive index study of n-type InGaAs grown on InP substrates

The refractive index of Si doped n-type InGaAs layers grown on InP substrates is studied. It is found that the numerical calculation can explain the carrier density dependence of the refractive index by considering the optical absorption change and the plasma effect.

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Bibliographic Details
Main Authors: Gozu, S., Mozume, T., Ishikawa, H.
Format: Conference Proceeding
Language:English
Subjects:
doping
Indium gallium arsenide
Indium phosphide
InGaAs
optical absorption change
Optical refraction
Optical saturation
Optical signal processing
Optical variables control
Optical wavelength conversion
plasma effect
Refractive index
Switches
Ultrafast optics
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Description
Summary:The refractive index of Si doped n-type InGaAs layers grown on InP substrates is studied. It is found that the numerical calculation can explain the carrier density dependence of the refractive index by considering the optical absorption change and the plasma effect.
ISSN:1092-8669
DOI:10.1109/ICIPRM.2008.4703011