DHBT with Esaki base emitter junction having A 60 NM wide emitter contact

We report on a double heterojunction bipolar transistor with an Esaki base emitter tunnel junction. The emitter and base contact are deposited simultaneously on top of the emitter contact layer. Transistors with 60 nm wide emitters were fabricated. The Esaki tunneling current did not degrade the gai...

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Bibliographic Details
Main Authors: Cohen Elias, D., Gavrilov, A., Cohen, S., Kraus, S., Ritter, D.
Format: Conference Proceeding
Language:English
Subjects:
Conductivity
Contact resistance
Current density
Degradation
Diodes
Doping
Indium gallium arsenide
Indium phosphide
Tunneling
Voltage
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Summary:We report on a double heterojunction bipolar transistor with an Esaki base emitter tunnel junction. The emitter and base contact are deposited simultaneously on top of the emitter contact layer. Transistors with 60 nm wide emitters were fabricated. The Esaki tunneling current did not degrade the gain of the device at high current density. The backward diode between the base contact and the base layer exhibited specific resistivity lower than 100 Omega-mum 2 .
ISSN:1092-8669
DOI:10.1109/ICIPRM.2008.4703076