Epitaxial Growth of SrM(00 l) Film on Au(111)

Strontium ferrite (SrFe 12 O 19 ) thin films have been deposited on thermally oxidized silicon wafer with Au underlayer by using DC magnetron sputtering system. Crystallization of the strontium hexaferrite phase on Au underlayer is achieved for deposition temperature as low as 475degC. The intensity...

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Bibliographic Details
Published in:IEEE transactions on magnetics 2008-11, Vol.44 (11), p.2899-2902
Main Authors: Kaewrawang, A., Ishida, G., Xiaoxi Liu, Morisako, A.
Format: Article
Language:English
Subjects:
Applied sciences
Cross-disciplinary physics: materials science
rheology
Crystallization
Deposition
Diffraction
Epitaxial growth
Exact sciences and technology
Ferrite
Ferrites
Gold
hexagonal ferrite
Magnetism
Materials science
Metals. Metallurgy
Other topics in materials science
perpendicular recording
Physics
Production techniques
Semiconductor thin films
Silicon
Sputtering
Strontium
strontium ferrite
Substrates
Surface treatment
Temperature
Thin films
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Summary:Strontium ferrite (SrFe 12 O 19 ) thin films have been deposited on thermally oxidized silicon wafer with Au underlayer by using DC magnetron sputtering system. Crystallization of the strontium hexaferrite phase on Au underlayer is achieved for deposition temperature as low as 475degC. The intensity of (111) diffraction line for Au and that of (00l) diffraction line for strontium ferrite decreases with increasing substrate temperature of underlayer. The maximum of coercivity and remanent squareness ratio in perpendicular direction are 5.7 kOe and 0.86, respectively, at substrate temperature of underlayer of 200degC.
ISSN:0018-9464
1941-0069
DOI:10.1109/TMAG.2008.2002584