Recovery and other effects of annihilation of high current density filaments after switching in chalcogenide alloys

Results of detailed experimental study of recovery times of threshold voltage, low field resistance, threshold current and maximum delay are reported with different film thickness. It was shown that the shortest recovery time has low field resistance. Threshold voltage and current recovery proceed s...

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Bibliographic Details
Main Author: Kostylev, S.A.
Format: Conference Proceeding
Language:English
Subjects:
Amorphous materials
chalcogenide
Conducting materials
Conductivity
Current density
Delay effects
Electronics industry
high current filament
memory
Nonhomogeneous media
Optical recording
recovery
switching
Threshold current
Threshold voltage
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Summary:Results of detailed experimental study of recovery times of threshold voltage, low field resistance, threshold current and maximum delay are reported with different film thickness. It was shown that the shortest recovery time has low field resistance. Threshold voltage and current recovery proceed slower. The threshold current recovery curve for OTS alloy demonstrates minima and saturates synchronously with V th . Using multi-pulse technique for independent variation of OFF-state voltage, ON-state current and delay time, it was found that these factors addressed different parameters of the device recovery process. The data prove that only processes during the delay time of switching can affect recovery of threshold voltage and current of switching. Observed behavior could be explained with a model of inhomogeneous media with localized in a channel negative differential conductivity of S-type (S-NDC).
DOI:10.1109/NVMT.2008.4731186