Unified regional modeling approach to emerging multiple-gate/nanowire MOSFETs

This paper reviews the basic governing equations for a double-gate/gate-all-around (DG/GAA) MOSFET in a generic and unified description. Starting from generic Poisson solution and input voltage equation, a paradigm shift with ground-reference and source/drain by label is proposed, which is essential...

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Bibliographic Details
Main Authors: Xing Zhou, Guan Huei See, Guojun Zhu, Shihuan Lin, Chengqing Wei, Junbin Zhang
Format: Conference Proceeding
Language:English
Subjects:
Capacitance
Doping
FETs
FinFETs
Integrated circuit modeling
MOSFETs
Poisson equations
Semiconductor device modeling
Semiconductor process modeling
Threshold voltage
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Summary:This paper reviews the basic governing equations for a double-gate/gate-all-around (DG/GAA) MOSFET in a generic and unified description. Starting from generic Poisson solution and input voltage equation, a paradigm shift with ground-reference and source/drain by label is proposed, which is essential in formulating equations for DG FinFETs without body contact. The unified regional modeling (URM) approach is used for unified surface-potential solutions, and is applied to demonstrate Gummel symmetry in doped DG with partial to full-depletion operations.
DOI:10.1109/ICSICT.2008.4734529