Room-temperature continuous-wave operation of 1.54-μm vertical-cavity lasers

We report on the room-temperature continuous-wave operation of vertical-cavity lasers operating at 1.54 μm. The devices use a 7 strain-compensated quantum-well active layer sandwiched between two Al(Ga)As-GaAs quarter-wave mirrors joined by wafer fusion. Five device sizes between 8 and 20 μm were fo...

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Published in:IEEE photonics technology letters 1995-11, Vol.7 (11), p.1225-1227
Main Authors: Babic, D.I., Streubel, K., Mirin, R.P., Margalit, N.M., Bowers, J.E., Hu, E.L., Mars, D.E., Long Yang, Carey, K.
Format: Article
Language:English
Subjects:
Costs
Doping
Indium phosphide
Laser fusion
Mars
Mirrors
Optical fiber communication
Quantum well lasers
Temperature
Vertical cavity surface emitting lasers
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cited_by cdi_FETCH-LOGICAL-c933-472bb6504a6c923510ff00c9c29df794973f76d40bbe68235f319ead1feba0103
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container_issue 11
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container_title IEEE photonics technology letters
container_volume 7
creator Babic, D.I.
Streubel, K.
Mirin, R.P.
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Carey, K.
description We report on the room-temperature continuous-wave operation of vertical-cavity lasers operating at 1.54 μm. The devices use a 7 strain-compensated quantum-well active layer sandwiched between two Al(Ga)As-GaAs quarter-wave mirrors joined by wafer fusion. Five device sizes between 8 and 20 μm were found to operate continuously at room temperature (23/spl deg/C), The lowest room-temperature continuous-wave threshold current of 2.3 mA was measured on an 8-μm diameter device, while the highest continuous-wave operating temperature of 33/spl deg/C was measured on a 12-μm device.
doi_str_mv 10.1109/68.473453
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source IEEE Electronic Library (IEL) Journals
subjects Costs
Doping
Indium phosphide
Laser fusion
Mars
Mirrors
Optical fiber communication
Quantum well lasers
Temperature
Vertical cavity surface emitting lasers
title Room-temperature continuous-wave operation of 1.54-μm vertical-cavity lasers
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