Influence of mirror reflectivity on laser performance of very-low-threshold vertical-cavity surface-emitting lasers

The influeuce of mirror reflectivity on laser performance of InGaAs-GaAs vertical-cavity surface-emitting lasers fabricated by selective oxidation is investigated by the stepwise change of the number of pairs in top mirror stack after device fabrication. Devices with 18-pair stacks in the top mirror...

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Bibliographic Details
Published in:IEEE photonics technology letters 1995-11, Vol.7 (11), p.1228-1230
Main Authors: Gye Mo Yang, MacDougal, M.H., Pudikov, V., Dapkus, P.D.
Format: Article
Language:English
Subjects:
Current density
Laser transitions
Mirrors
Optical device fabrication
Oxidation
Power generation
Reflectivity
Surface emitting lasers
Threshold current
Vertical cavity surface emitting lasers
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Summary:The influeuce of mirror reflectivity on laser performance of InGaAs-GaAs vertical-cavity surface-emitting lasers fabricated by selective oxidation is investigated by the stepwise change of the number of pairs in top mirror stack after device fabrication. Devices with 18-pair stacks in the top mirror, which is the optimized number of pairs in this structure, show an output power over 1.9 mW and a slope efficiency of 55% while maintaining a low threshold current of 212 μA. The analysis of the threshold current and differential efficiency related to mirror reflectivity shows an internal quantum efficiency of 95%, an internal round-trip loss of 0.072, and a transparency current density of 71 A/cm 2 .
ISSN:1041-1135
1941-0174
DOI:10.1109/68.473454