High-responsivity InGaAs MSM photodetectors with semi-transparent Schottky contacts

High-performance metal-semiconductor-metal photodetectors (MSM-PD's) with interdigitated semi-transparent Au Schottky contacts have been fabricated on pseudomorphic In/sub 0.9/Ga/sub 0.1/P-InP-InGaAs heterostructure. The responsivity measured at 1.55-μm wavelength is greatly enhanced from 0.4 A...

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Bibliographic Details
Published in:IEEE photonics technology letters 1995-11, Vol.7 (11), p.1333-1335
Main Authors: Rong-Hen Yuang, Jen-Inn Chyi, Yi-Jen Chan, Wei Lin, Yuan-Kuang Tu
Format: Article
Language:English
Subjects:
Conductivity
Electrodes
FETs
Gold
Indium gallium arsenide
Indium phosphide
Indium tin oxide
Lighting
Photodetectors
Schottky barriers
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Summary:High-performance metal-semiconductor-metal photodetectors (MSM-PD's) with interdigitated semi-transparent Au Schottky contacts have been fabricated on pseudomorphic In/sub 0.9/Ga/sub 0.1/P-InP-InGaAs heterostructure. The responsivity measured at 1.55-μm wavelength is greatly enhanced from 0.4 A/W to 0.7 A/W as the thickness of the Au electrodes is decreased to 10 nm. This corresponds to a 75% improvement over the conventional MSM-PD's with opaque metal electrodes. With a pseudomorphic InGaP barrier-enhancement layer, these devices exhibit a dark current density as low as 1.6 pA/μm 2 . Extremely linear photoresponse without any internal gain is also observed for these detectors. The full-width at half maximum of the temporal response for the devices with semi-transparent electrodes is about 85 ps compared to 80 ps for the conventional ones.
ISSN:1041-1135
1941-0174
DOI:10.1109/68.473489