Photoelectrical properties of TOS thin films based on TiO2 prepared by modified magnetron sputtering

In this work photoelectrical properties of the thin films based on TiO2 have been presented. Thin films were deposited by high energy (HE) magnetron sputtering process. The properties of thin films were modified by doping with Tb and Pd. Structural studies performed with X-ray diffraction measuremen...

Full description

Saved in:
Bibliographic Details
Main Authors: Wojcieszak, D., Domaradzki, J., Kaczmarek, D., Adamiak, B.
Format: Conference Proceeding
Language:English
Subjects:
Conductivity
Doping
Helium
Optical beams
Optical films
Performance evaluation
Phase measurement
Sputtering
Transistors
X-ray diffraction
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this work photoelectrical properties of the thin films based on TiO2 have been presented. Thin films were deposited by high energy (HE) magnetron sputtering process. The properties of thin films were modified by doping with Tb and Pd. Structural studies performed with X-ray diffraction measurements, have shown that after deposition rutile phase in TiO 2 :(Tb, Pd) thin films was received. The results also have shown that examined thin films were nanocrystalline. doping of TiO 2 -isulating matrix with selected Pd-Tb dopants results in enhanced electrical conductivity of prepared thin films, i.e. oxide-semiconductors with p-type of electrical conduction. Photoelectrical properties of TiO 2 :(Tb,Pd) thin films were examined by optical beam induced current method. The results of transient photovoltage response to optical excitation have shown that the photovoltage was generated at the active area of prepared TOS-Si heterojunction.
DOI:10.1109/ASDAM.2008.4743338