Low-temperature hole mobility in rolled-up Si/SiGe heterostructures

We present a theoretical study of the low-field hole mobility in modulation doped scrolled SiGe heterostructures which can be realized from rolled-up strained Si-SiGe films. The simulation of the hole transport along the structure axis is based on a Monte Carlo method and includes hole interaction w...

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Bibliographic Details
Main Authors: Demarina, N.V., Gruetzmacher, D.A.
Format: Conference Proceeding
Language:English
Subjects:
Capacitive sensors
Charge carriers
Effective mass
Epitaxial layers
Germanium silicon alloys
Lattices
Poisson equations
Scattering
Silicon germanium
Temperature
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Summary:We present a theoretical study of the low-field hole mobility in modulation doped scrolled SiGe heterostructures which can be realized from rolled-up strained Si-SiGe films. The simulation of the hole transport along the structure axis is based on a Monte Carlo method and includes hole interaction with phonons and interface roughness at low temperature. We show that the hole mobility is mainly limited by interface roughness scattering and can reach a value of 2times10 4 cm 2 /Vs.
DOI:10.1109/ASDAM.2008.4743367