A wide-band low-noise charge amplifier with High Electron Mobility Transistor input stage

We present the design and performance of a wide-band amplifier for radiation detectors employing an High Electron Mobility Transistor at its input. An Equivalent Noise Charge of less than 150 rms electrons has been measured at room temperature with RC-CR shaping ranging from 100 ns down to 10 ns. Th...

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Bibliographic Details
Main Authors: Bertuccio, G., Pullia, A.
Format: Conference Proceeding
Language:English
Subjects:
Broadband amplifiers
Charge measurement
Current measurement
Electron mobility
HEMTs
Low-noise amplifiers
MODFETs
Noise shaping
Radiation detectors
Temperature measurement
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Summary:We present the design and performance of a wide-band amplifier for radiation detectors employing an High Electron Mobility Transistor at its input. An Equivalent Noise Charge of less than 150 rms electrons has been measured at room temperature with RC-CR shaping ranging from 100 ns down to 10 ns. The particular requirements and advantages for using HEMTs as front-end device in charge amplifier are analysed.< >
DOI:10.1109/NSSMIC.1994.474504