Enhanced oxygen adsorption activity by CuO catalyst clusters on SnO2 thin film based sensors

Resistance characteristics of thin film sensors based on uncoated SnO 2 , SnO 2 with CuO overlayer and SnO 2 with CuO dotted clusters are compared in three different backgrounds of air, oxygen and vacuum. Measurements for the three sensor configurations are carried out as a function of temperature....

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Bibliographic Details
Main Authors: Chowdhuri, A., Haridas, D., Sreenivas, K., Gupta, V.
Format: Conference Proceeding
Language:English
Subjects:
adsorption
Charge carriers
Electrons
Gas detectors
Gas Sensor
Semiconductivity
Semiconductor thin films
Sensor phenomena and characterization
Sputtering
Surface resistance
Temperature sensors
Thin film sensors
thin films
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Summary:Resistance characteristics of thin film sensors based on uncoated SnO 2 , SnO 2 with CuO overlayer and SnO 2 with CuO dotted clusters are compared in three different backgrounds of air, oxygen and vacuum. Measurements for the three sensor configurations are carried out as a function of temperature. The novel dispersal method of CuO catalyst in the form of dotted clusters is seen to enhance the oxygen adsorption activity on surface of SnO 2 thin film sensors. Conversion of molecular oxygen (O 2 - ) to atomic oxygen (O - ) is shown to reduce the concentration of charge carriers in the conduction band of SnO 2 film. Co-existence of a greater amount of adsorbed oxygen on the SnO 2 film surface in conjunction with modulation of the space-charge region at the CuO-SnO 2 interface are attributed to influence the resistance of the sensor structures under reducing gas.
ISSN:2156-8065
2156-8073
DOI:10.1109/ICSENST.2008.4757167