Electrical characteristics and reliability of hafnium oxide films with nitrogen doping

The effects of trace amount of nitrogen doping on the electrical characteristics of thin hafnium oxide have been studied. The chemical compositions and bonding structure of the dielectric film have been explored with x-ray photoelectron spectroscopy (XPS) measurements. Current-voltage (I-V) and capa...

Full description

Saved in:
Bibliographic Details
Main Authors: Sen, B., Yang, B.L.
Format: Conference Proceeding
Language:English
Subjects:
Bonding
Capacitance-voltage characteristics
Chemicals
Dielectric films
Dielectric measurements
Doping
Electric variables
Hafnium oxide
Nitrogen
Temperature measurement
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by
cites
container_end_page 4
container_issue
container_start_page 1
container_title
container_volume
creator Sen, B.
Yang, B.L.
description The effects of trace amount of nitrogen doping on the electrical characteristics of thin hafnium oxide have been studied. The chemical compositions and bonding structure of the dielectric film have been explored with x-ray photoelectron spectroscopy (XPS) measurements. Current-voltage (I-V) and capacitance-voltage (C-V) measurements have been conducted on nitrogen-doped hafnium oxide samples and to study the reliability of the film constant-voltage stressing has been performed. The trapping characteristics have been further revealed by conducting the I-V and C-V measurements at different temperatures ranging from 100 to 400 K. We have found that although the deep trap level due to oxygen vacancy and interface trap density due to Hf-Si bonding can be significantly suppressed with nitrogen doping; large amount of shallow traps are still present.
doi_str_mv 10.1109/EDSSC.2008.4760707
format conference_proceeding
fullrecord <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_4760707</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4760707</ieee_id><sourcerecordid>4760707</sourcerecordid><originalsourceid>FETCH-LOGICAL-i90t-d127635fbf20f8ac7cfda6c16c75facb54a6d4c2961572b7be8249d8ef91116d3</originalsourceid><addsrcrecordid>eNotkMtKxDAYhSMyoDP2BXSTF2hN0lyapdR6gQEXM7gd0lymv_QypBGdt1exZ3P44PAtDkK3lBSUEn3fPO52dcEIqQquJFFEXaBMq4pyxjkTnLBLtF6g1GKF1n9bTTgt2RXK5vmD_IaLUmh5jd6b3tsUwZoe285EY5OPMCewMzajw9H3YFroIZ3xFHBnwgifA56-wXkcoB9m_AWpwyOkOB39iN10gvF4g1bB9LPPlt6g_VOzr1_y7dvza_2wzUGTlDvKlCxFaAMjoTJW2eCMtFRaJYKxreBGOm6ZllQo1qrWV4xrV_mgKaXSlRt0968F7_3hFGEw8XxYbil_ANS0Vek</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Electrical characteristics and reliability of hafnium oxide films with nitrogen doping</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Sen, B. ; Yang, B.L.</creator><creatorcontrib>Sen, B. ; Yang, B.L.</creatorcontrib><description>The effects of trace amount of nitrogen doping on the electrical characteristics of thin hafnium oxide have been studied. The chemical compositions and bonding structure of the dielectric film have been explored with x-ray photoelectron spectroscopy (XPS) measurements. Current-voltage (I-V) and capacitance-voltage (C-V) measurements have been conducted on nitrogen-doped hafnium oxide samples and to study the reliability of the film constant-voltage stressing has been performed. The trapping characteristics have been further revealed by conducting the I-V and C-V measurements at different temperatures ranging from 100 to 400 K. We have found that although the deep trap level due to oxygen vacancy and interface trap density due to Hf-Si bonding can be significantly suppressed with nitrogen doping; large amount of shallow traps are still present.</description><identifier>ISBN: 1424425395</identifier><identifier>ISBN: 9781424425396</identifier><identifier>EISBN: 9781424425402</identifier><identifier>EISBN: 1424425409</identifier><identifier>DOI: 10.1109/EDSSC.2008.4760707</identifier><identifier>LCCN: 2008904132</identifier><language>eng</language><publisher>IEEE</publisher><subject>Bonding ; Capacitance-voltage characteristics ; Chemicals ; Dielectric films ; Dielectric measurements ; Doping ; Electric variables ; Hafnium oxide ; Nitrogen ; Temperature measurement</subject><ispartof>2008 IEEE International Conference on Electron Devices and Solid-State Circuits, 2008, p.1-4</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4760707$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4760707$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Sen, B.</creatorcontrib><creatorcontrib>Yang, B.L.</creatorcontrib><title>Electrical characteristics and reliability of hafnium oxide films with nitrogen doping</title><title>2008 IEEE International Conference on Electron Devices and Solid-State Circuits</title><addtitle>EDSSC</addtitle><description>The effects of trace amount of nitrogen doping on the electrical characteristics of thin hafnium oxide have been studied. The chemical compositions and bonding structure of the dielectric film have been explored with x-ray photoelectron spectroscopy (XPS) measurements. Current-voltage (I-V) and capacitance-voltage (C-V) measurements have been conducted on nitrogen-doped hafnium oxide samples and to study the reliability of the film constant-voltage stressing has been performed. The trapping characteristics have been further revealed by conducting the I-V and C-V measurements at different temperatures ranging from 100 to 400 K. We have found that although the deep trap level due to oxygen vacancy and interface trap density due to Hf-Si bonding can be significantly suppressed with nitrogen doping; large amount of shallow traps are still present.</description><subject>Bonding</subject><subject>Capacitance-voltage characteristics</subject><subject>Chemicals</subject><subject>Dielectric films</subject><subject>Dielectric measurements</subject><subject>Doping</subject><subject>Electric variables</subject><subject>Hafnium oxide</subject><subject>Nitrogen</subject><subject>Temperature measurement</subject><isbn>1424425395</isbn><isbn>9781424425396</isbn><isbn>9781424425402</isbn><isbn>1424425409</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2008</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNotkMtKxDAYhSMyoDP2BXSTF2hN0lyapdR6gQEXM7gd0lymv_QypBGdt1exZ3P44PAtDkK3lBSUEn3fPO52dcEIqQquJFFEXaBMq4pyxjkTnLBLtF6g1GKF1n9bTTgt2RXK5vmD_IaLUmh5jd6b3tsUwZoe285EY5OPMCewMzajw9H3YFroIZ3xFHBnwgifA56-wXkcoB9m_AWpwyOkOB39iN10gvF4g1bB9LPPlt6g_VOzr1_y7dvza_2wzUGTlDvKlCxFaAMjoTJW2eCMtFRaJYKxreBGOm6ZllQo1qrWV4xrV_mgKaXSlRt0968F7_3hFGEw8XxYbil_ANS0Vek</recordid><startdate>200812</startdate><enddate>200812</enddate><creator>Sen, B.</creator><creator>Yang, B.L.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>200812</creationdate><title>Electrical characteristics and reliability of hafnium oxide films with nitrogen doping</title><author>Sen, B. ; Yang, B.L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-d127635fbf20f8ac7cfda6c16c75facb54a6d4c2961572b7be8249d8ef91116d3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Bonding</topic><topic>Capacitance-voltage characteristics</topic><topic>Chemicals</topic><topic>Dielectric films</topic><topic>Dielectric measurements</topic><topic>Doping</topic><topic>Electric variables</topic><topic>Hafnium oxide</topic><topic>Nitrogen</topic><topic>Temperature measurement</topic><toplevel>online_resources</toplevel><creatorcontrib>Sen, B.</creatorcontrib><creatorcontrib>Yang, B.L.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Xplore</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Sen, B.</au><au>Yang, B.L.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Electrical characteristics and reliability of hafnium oxide films with nitrogen doping</atitle><btitle>2008 IEEE International Conference on Electron Devices and Solid-State Circuits</btitle><stitle>EDSSC</stitle><date>2008-12</date><risdate>2008</risdate><spage>1</spage><epage>4</epage><pages>1-4</pages><isbn>1424425395</isbn><isbn>9781424425396</isbn><eisbn>9781424425402</eisbn><eisbn>1424425409</eisbn><abstract>The effects of trace amount of nitrogen doping on the electrical characteristics of thin hafnium oxide have been studied. The chemical compositions and bonding structure of the dielectric film have been explored with x-ray photoelectron spectroscopy (XPS) measurements. Current-voltage (I-V) and capacitance-voltage (C-V) measurements have been conducted on nitrogen-doped hafnium oxide samples and to study the reliability of the film constant-voltage stressing has been performed. The trapping characteristics have been further revealed by conducting the I-V and C-V measurements at different temperatures ranging from 100 to 400 K. We have found that although the deep trap level due to oxygen vacancy and interface trap density due to Hf-Si bonding can be significantly suppressed with nitrogen doping; large amount of shallow traps are still present.</abstract><pub>IEEE</pub><doi>10.1109/EDSSC.2008.4760707</doi><tpages>4</tpages></addata></record>
fulltext fulltext_linktorsrc
identifier ISBN: 1424425395
ispartof 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, 2008, p.1-4
issn
language eng
recordid cdi_ieee_primary_4760707
source IEEE Electronic Library (IEL) Conference Proceedings
subjects Bonding
Capacitance-voltage characteristics
Chemicals
Dielectric films
Dielectric measurements
Doping
Electric variables
Hafnium oxide
Nitrogen
Temperature measurement
title Electrical characteristics and reliability of hafnium oxide films with nitrogen doping
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-19T18%3A06%3A10IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Electrical%20characteristics%20and%20reliability%20of%20hafnium%20oxide%20films%20with%20nitrogen%20doping&rft.btitle=2008%20IEEE%20International%20Conference%20on%20Electron%20Devices%20and%20Solid-State%20Circuits&rft.au=Sen,%20B.&rft.date=2008-12&rft.spage=1&rft.epage=4&rft.pages=1-4&rft.isbn=1424425395&rft.isbn_list=9781424425396&rft_id=info:doi/10.1109/EDSSC.2008.4760707&rft.eisbn=9781424425402&rft.eisbn_list=1424425409&rft_dat=%3Cieee_6IE%3E4760707%3C/ieee_6IE%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-i90t-d127635fbf20f8ac7cfda6c16c75facb54a6d4c2961572b7be8249d8ef91116d3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=4760707&rfr_iscdi=true