Recent development in the growth of ZnO nanoparticles thin film by magnetron sputtering

Zinc oxide (ZnO) nanoparticles is an attractive candidate and gain attention for their novel properties and promising applications such as optoelectronic devices by virtue of their high surface to volume ratio and molecular absorption and desorption characteristics. Ultraviolet light emmiters, gas s...

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Bibliographic Details
Main Authors: Ooi, M.D.J., Aziz, A.A., Abdullah, M.J.
Format: Conference Proceeding
Language:English
Subjects:
Grain size
Nanoparticles
Nitrogen
Radio frequency
Semiconductor thin films
Sputtering
Substrates
Temperature
Voltage
Zinc oxide
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Summary:Zinc oxide (ZnO) nanoparticles is an attractive candidate and gain attention for their novel properties and promising applications such as optoelectronic devices by virtue of their high surface to volume ratio and molecular absorption and desorption characteristics. Ultraviolet light emmiters, gas sensor (particularly for hydrogen) etc. are some of the potential applications of this wide direct band gap (E g ~ 3.37 eV) semiconductor. Currently, there are considerable amount of research attention on the growth of p-type ZnO thin film and nanoparticles. Thus, in this paper we will discuss recent development in the growth of p-type and ZnO thin film in nanoparticles by magnetron sputtering. There are several important parameters (e.g. RF power/DC voltage, working pressure, substrates temperature and target to substrates distance) that we have to consider in order to attain small grain size (
DOI:10.1109/SMELEC.2008.4770377