A Thin-Film SOI 180nm CMOS RF Switch

This paper describes a single pole, single throw (SPST) 180 nm CMOS thin film SOI switch developed for the most difficult cellular and 802.11x RF switch applications. We will show that power handling, linearity, insertion loss, isolation and switching times are competitive with switch applications u...

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Bibliographic Details
Main Authors: Wolf, R., Joseph, A., Botula, A., Slinkman, J.
Format: Conference Proceeding
Language:English
Subjects:
CMOS technology
Communication switching
FETs
Gallium arsenide
Insertion loss
Radio frequency
Silicon on insulator technology
Switches
Transistors
Transmitters
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Summary:This paper describes a single pole, single throw (SPST) 180 nm CMOS thin film SOI switch developed for the most difficult cellular and 802.11x RF switch applications. We will show that power handling, linearity, insertion loss, isolation and switching times are competitive with switch applications utilizing GaAs pHEMT and silicon- on-sapphire technologies.
DOI:10.1109/SMIC.2009.4770520