Accurate Nonlinear Electron Device Modelling for Cold FET Mixer Design

A nonlinear empirical model is here adopted to model the cold-FET behaviour of a GaAs PHEMT, in the framework of a resistive mixer application. The model, purely mathematical and technology independent, is suitably identified in the device operative region of interest and is validated in large-signa...

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Bibliographic Details
Main Authors: di Giacomo, V., Santarelli, A., Raffo, A., Traverso, P.A., Schreurs, D., Lonac, J., Resca, D., Vannini, G., Filicori, F., Pagani, M.
Format: Conference Proceeding
Language:English
Subjects:
Accuracy
Convolution
Design engineering
Electron devices
FETs
Frequency estimation
Integrated circuit modeling
Mathematical model
Predictive models
Voltage
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Summary:A nonlinear empirical model is here adopted to model the cold-FET behaviour of a GaAs PHEMT, in the framework of a resistive mixer application. The model, purely mathematical and technology independent, is suitably identified in the device operative region of interest and is validated in large-signal conditions by exploiting a measurements setup based on LS-VNA.
DOI:10.1109/EMICC.2008.4772287