Separation of interface and nonuniform oxide traps by the DC current-voltage method

Areally nonuniform distribution of oxide charge gives a significant distortion in the gate capacitance and subthreshold DC drain current versus DC gate voltage characteristics. This distortion prevents a reliable determination of the spatial profile of interface and oxide traps generated when a MOS...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on electron devices 1996-01, Vol.43 (1), p.137-141
Main Authors: Kavalieros, J.T., Chih-Tang Sah
Format: Article
Language:English
Subjects:
Capacitance
Electron traps
Hot carriers
Laboratories
Lifting equipment
Silicon
Solid state circuits
Stress
Substrate hot electron injection
Threshold voltage
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Areally nonuniform distribution of oxide charge gives a significant distortion in the gate capacitance and subthreshold DC drain current versus DC gate voltage characteristics. This distortion prevents a reliable determination of the spatial profile of interface and oxide traps generated when a MOS transistor is subjected to channel hot carrier stress. A new procedure is demonstrated which separates the nonuniform oxide charge distribution from interface traps by combining the analysis of two experimental DC characteristics: the subthreshold drain-current and the DC base recombination current versus the gate voltage.
ISSN:0018-9383
1557-9646
DOI:10.1109/16.477604