Cap thickness effects on Al/sub 0.37/Ga/sub 0.63/As and GaAs diode solar cells

The average device yield for high efficiency Al/sub 0.37/Ga/sub 0.63/As and GaAs n-p diode solar cells was increased, from below 25% to above 75%, by doubling the thickness of the GaAs cap layer to 0.6 /spl mu/m. Low yields were characterized by a nonlinear shunting mechanism, which partially shorte...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1996-01, Vol.43 (1), p.183-185
Main Authors: Ristow, L.M., Kuryla, M.S., Chung, B.-C., Partain, L.D.
Format: Article
Language:English
Subjects:
Chemical vapor deposition
Diodes
Gallium arsenide
Laboratories
MOCVD
Ohmic contacts
Photovoltaic cells
Renewable energy resources
Solar energy
Sun
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Summary:The average device yield for high efficiency Al/sub 0.37/Ga/sub 0.63/As and GaAs n-p diode solar cells was increased, from below 25% to above 75%, by doubling the thickness of the GaAs cap layer to 0.6 /spl mu/m. Low yields were characterized by a nonlinear shunting mechanism, which partially shorted the junction of the solar cell, independent of the various contact metals and thermal treatments used for ohmic contact formation.
ISSN:0018-9383
1557-9646
DOI:10.1109/16.477615